TY - JOUR
T1 - Room temperature ferromagnetism in Tb doped ZnO nanocrystalline films
AU - Wu, Z.
AU - Liu, X. C.
AU - Huang, J. C.A.
N1 - Funding Information:
This work is supported by the Nation Science Council of Taiwan, ROC under Grant No. 97-2120-M-006–010 and the Center for Micro-Nano Techonology, National Cheng Kung University.
PY - 2012/2
Y1 - 2012/2
N2 - Nanocrystalline Tb doped ZnO films have been prepared by ion-beam sputtering technology. Magnetic property shows that the films are ferromagnetic and the Curie Temperature (Tc) is over room temperature. Structure property investigation indicates that no secondary phase is found in all the films, which suggests that the ferromagnetism is caused by the incorporation of Tb into ZnO lattice. The saturation magnetization of the films are about 0.38 μb/Tb. Electrical property investigation proves that the carriers of the films are strongly localized, which suggests that the ferromagnetism in the film may be caused by the defects in the films.
AB - Nanocrystalline Tb doped ZnO films have been prepared by ion-beam sputtering technology. Magnetic property shows that the films are ferromagnetic and the Curie Temperature (Tc) is over room temperature. Structure property investigation indicates that no secondary phase is found in all the films, which suggests that the ferromagnetism is caused by the incorporation of Tb into ZnO lattice. The saturation magnetization of the films are about 0.38 μb/Tb. Electrical property investigation proves that the carriers of the films are strongly localized, which suggests that the ferromagnetism in the film may be caused by the defects in the films.
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U2 - 10.1016/j.jmmm.2011.08.017
DO - 10.1016/j.jmmm.2011.08.017
M3 - Article
AN - SCOPUS:80054072078
SN - 0304-8853
VL - 324
SP - 642
EP - 644
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
IS - 4
ER -