TY - JOUR
T1 - Room temperature multiplexed gas sensing using chemical-sensitive 3.5-nm-thin silicon transistors
AU - Fahad, Hossain Mohammad
AU - Shiraki, Hiroshi
AU - Amani, Matin
AU - Zhang, Chuchu
AU - Hebbar, Vivek Srinivas
AU - Gao, Wei
AU - Ota, Hiroki
AU - Hettick, Mark
AU - Kiriya, Daisuke
AU - Chen, Yu Ze
AU - Chueh, Yu Lun
AU - Javey, Ali
N1 - Publisher Copyright:
© 2017 The Authors, some rights reserved;
PY - 2017/3
Y1 - 2017/3
N2 - There is great interest in developing a low-power gas sensing technology that can sensitively and selectively quantify the chemical composition of a target atmosphere. Nanomaterials have emerged as extremely promising candidates for this technology due to their inherent low-dimensional nature and high surface-to-volume ratio. Among these, nanoscale silicon is of great interest because pristine silicon is largely inert on its own in the context of gas sensing, unless functionalized with an appropriate gas-sensitive material. We report a chemical-sensitive field-effect transistor (CS-FET) platform based on 3.5-nm-thin silicon channel transistors. Using industry-compatible processing techniques, the conventional electrically active gate stack is replaced by an ultrathin chemical-sensitive layer that is electrically nonconducting and coupled to the 3.5-nm-thin silicon channel. We demonstrate a low-power, sensitive, and selective multiplexed gas sensing technology using this platform by detecting H2S, H2, and NO2 at room temperature for environment, health, and safety in the oil and gas industry, offering significant advantages over existing technology. Moreover, the system described here can be readily integrated with mobile electronics for distributed sensor networks in environmental pollution mapping and personal air-quality monitors.
AB - There is great interest in developing a low-power gas sensing technology that can sensitively and selectively quantify the chemical composition of a target atmosphere. Nanomaterials have emerged as extremely promising candidates for this technology due to their inherent low-dimensional nature and high surface-to-volume ratio. Among these, nanoscale silicon is of great interest because pristine silicon is largely inert on its own in the context of gas sensing, unless functionalized with an appropriate gas-sensitive material. We report a chemical-sensitive field-effect transistor (CS-FET) platform based on 3.5-nm-thin silicon channel transistors. Using industry-compatible processing techniques, the conventional electrically active gate stack is replaced by an ultrathin chemical-sensitive layer that is electrically nonconducting and coupled to the 3.5-nm-thin silicon channel. We demonstrate a low-power, sensitive, and selective multiplexed gas sensing technology using this platform by detecting H2S, H2, and NO2 at room temperature for environment, health, and safety in the oil and gas industry, offering significant advantages over existing technology. Moreover, the system described here can be readily integrated with mobile electronics for distributed sensor networks in environmental pollution mapping and personal air-quality monitors.
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U2 - 10.1126/sciadv.1602557
DO - 10.1126/sciadv.1602557
M3 - Article
C2 - 28378017
AN - SCOPUS:85041212254
SN - 2375-2548
VL - 3
JO - Science Advances
JF - Science Advances
IS - 3
M1 - e1602557
ER -