Room temperature negative differential resistance in Au/singie ZnO wire/Au junction structure

Yang Zhang, Dai Jang Chen, Ching Ting Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have fabricated a novel device composed of a single ZnO wire bridged on a pair of Au electrodes. The charge transport in Au/single ZnO wire/Au is investigated by the current-voltage measurement. A negative differential resistance behavior (NDR) in current-voltage curve of single compound semiconductor wire is first observed at room temperature. A peak-to-valley current ratio is greater than 3:1. The NDR may be due to a specific metal-wire surface contact nanoscale contacts and electronic coupling between a single ZnO wire and Au electrodes. It is expected that ZnO wire can be applied to the nanoelectronic devices.

Original languageEnglish
Title of host publicationECS Transactions - Nanoscale One-Dimensional Electronic and Photonic Devices, NODEPD
PublisherElectrochemical Society Inc.
Pages7-13
Number of pages7
Edition8
ISBN (Electronic)9781566775748
ISBN (Print)9781604238938
DOIs
Publication statusPublished - 2007
Event1st Nanoscale One-Dimensional Electronic and Photonic Devices, NODEPD - 212th ECS Meeting - Washington, DC, United States
Duration: 2007 Oct 72007 Oct 12

Publication series

NameECS Transactions
Number8
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other1st Nanoscale One-Dimensional Electronic and Photonic Devices, NODEPD - 212th ECS Meeting
Country/TerritoryUnited States
CityWashington, DC
Period07-10-0707-10-12

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint

Dive into the research topics of 'Room temperature negative differential resistance in Au/singie ZnO wire/Au junction structure'. Together they form a unique fingerprint.

Cite this