Room temperature negative differential resistance in Au/singie ZnO wire/Au junction structure

Yang Zhang, Dai Jang Chen, Ching Ting Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have fabricated a novel device composed of a single ZnO wire bridged on a pair of Au electrodes. The charge transport in Au/single ZnO wire/Au is investigated by the current-voltage measurement. A negative differential resistance behavior (NDR) in current-voltage curve of single compound semiconductor wire is first observed at room temperature. A peak-to-valley current ratio is greater than 3:1. The NDR may be due to a specific metal-wire surface contact nanoscale contacts and electronic coupling between a single ZnO wire and Au electrodes. It is expected that ZnO wire can be applied to the nanoelectronic devices.

Original languageEnglish
Title of host publicationECS Transactions - Nanoscale One-Dimensional Electronic and Photonic Devices, NODEPD
Pages7-13
Number of pages7
Edition8
DOIs
Publication statusPublished - 2007 Dec 1
Event1st Nanoscale One-Dimensional Electronic and Photonic Devices, NODEPD - 212th ECS Meeting - Washington, DC, United States
Duration: 2007 Oct 72007 Oct 12

Publication series

NameECS Transactions
Number8
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other1st Nanoscale One-Dimensional Electronic and Photonic Devices, NODEPD - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period07-10-0707-10-12

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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