Room temperature operation of a GaAs tristate switch with a double triangular barrier structure

K. F. Yarn, Y. H. Wang

Research output: Contribution to journalArticlepeer-review

Abstract

A new GaAs double triangular barrier (DTB) switch, prepared by molecular-beam epitaxy (MBE), using p+-n-δ(p+)-n-δ(p+)-n-n+ structure was fabricated and demonstrated. A tristate switching behaviour due to the sequential collapse of internal barriers was clearly observed for the first time. This phenomenon introduced triple stable regions into the device operation. Based on a proper circuit design, the structure studied has good potential for tristate-logic applications.

Original languageEnglish
Pages (from-to)235-237
Number of pages3
JournalJournal of Materials Science: Materials in Electronics
Volume5
Issue number4
DOIs
Publication statusPublished - 1994 Aug 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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