A new negative differential resistance (NDR) device with a bulk barrier and resonant tunnelling structure has been prepared by molecular-beam epitaxy. A peak-to-valley current ratio up to 22 and a peak current density of l0 kAcm-2are obtained at room temperature. The former is the largest value ever reported in the AlGaAs/GaAs system. Higher power output also can be expected.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics