Room-temperature operation of a novel negative differential resistance device prepared by molecular-beam epitaxy

K. F. Yarn, Yeong-Her Wang, C. Y. Chang

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

A new negative differential resistance (NDR) device with a bulk barrier and resonant tunnelling structure has been prepared by molecular-beam epitaxy. A peak-to-valley current ratio up to 22 and a peak current density of l0 kAcm-2are obtained at room temperature. The former is the largest value ever reported in the AlGaAs/GaAs system. Higher power output also can be expected.

Original languageEnglish
Pages (from-to)339-342
Number of pages4
JournalPhilosophical Magazine Letters
Volume61
Issue number6
DOIs
Publication statusPublished - 1990 Jan 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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