Room-temperature operation of a novel negative differential resistance device prepared by molecular-beam epitaxy

K. F. Yarn; Y. H. Wang; C. Y. Chang

doi:10.1080/09500839008206502

Room-temperature operation of a novel negative differential resistance device prepared by molecular-beam epitaxy

K. F. Yarn, Y. H. Wang, C. Y. Chang

Research output: Contribution to journal › Article › peer-review

Abstract

A new negative differential resistance (NDR) device with a bulk barrier and resonant tunnelling structure has been prepared by molecular-beam epitaxy. A peak-to-valley current ratio up to 22 and a peak current density of l0 kAcm^-2are obtained at room temperature. The former is the largest value ever reported in the AlGaAs/GaAs system. Higher power output also can be expected.

Original language	English
Pages (from-to)	339-342
Number of pages	4
Journal	Philosophical Magazine Letters
Volume	61
Issue number	6
DOIs	https://doi.org/10.1080/09500839008206502
Publication status	Published - 1990 Jun

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1080/09500839008206502

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title = "Room-temperature operation of a novel negative differential resistance device prepared by molecular-beam epitaxy",

abstract = "A new negative differential resistance (NDR) device with a bulk barrier and resonant tunnelling structure has been prepared by molecular-beam epitaxy. A peak-to-valley current ratio up to 22 and a peak current density of l0 kAcm-2are obtained at room temperature. The former is the largest value ever reported in the AlGaAs/GaAs system. Higher power output also can be expected.",

author = "Yarn, {K. F.} and Wang, {Y. H.} and Chang, {C. Y.}",

note = "Funding Information: This work is partially supported by the National Science Council of the Republic of China under contracts NSC-79-0417-E006-02 and NSC-79-0417-E006-03. We are grateful to Miss H. R. Sze for her technical assistance related to this work.",

year = "1990",

month = jun,

doi = "10.1080/09500839008206502",

language = "English",

volume = "61",

pages = "339--342",

journal = "Philosophical Magazine Letters",

issn = "0950-0839",

publisher = "Taylor and Francis Ltd.",

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T1 - Room-temperature operation of a novel negative differential resistance device prepared by molecular-beam epitaxy

AU - Yarn, K. F.

AU - Wang, Y. H.

AU - Chang, C. Y.

N1 - Funding Information: This work is partially supported by the National Science Council of the Republic of China under contracts NSC-79-0417-E006-02 and NSC-79-0417-E006-03. We are grateful to Miss H. R. Sze for her technical assistance related to this work.

PY - 1990/6

Y1 - 1990/6

N2 - A new negative differential resistance (NDR) device with a bulk barrier and resonant tunnelling structure has been prepared by molecular-beam epitaxy. A peak-to-valley current ratio up to 22 and a peak current density of l0 kAcm-2are obtained at room temperature. The former is the largest value ever reported in the AlGaAs/GaAs system. Higher power output also can be expected.

AB - A new negative differential resistance (NDR) device with a bulk barrier and resonant tunnelling structure has been prepared by molecular-beam epitaxy. A peak-to-valley current ratio up to 22 and a peak current density of l0 kAcm-2are obtained at room temperature. The former is the largest value ever reported in the AlGaAs/GaAs system. Higher power output also can be expected.

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JO - Philosophical Magazine Letters

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Room-temperature operation of a novel negative differential resistance device prepared by molecular-beam epitaxy

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