Room-Temperature Operation of In0.5Ga0.5 As Quantum Dot Lasers Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy

Tzer En Nee, Nien Tze Yeh, Po Wen Shiao, Jen Inn Chyi, Ching Ting Lee

Research output: Contribution to journalConference articlepeer-review

7 Citations (Scopus)

Abstract

We have investigated the characteristics of self-assembled In0.5Ga0.5As quantum dot lasers grown on three types of (100) GaAs substrates, i.e. 0°, 4° and 15°-tilted toward the (111)Ga plane. The lasing wavelength at room temperature is 1018 nm, 1015nm,and 1030 nm for the 0°, 4° and 15°-0ff samples, respectively. Due to the better quantum confinement and arrangement of the quantum dots, the 4o-off samples exhibit a lower threshold current of 47 mA at room temperature, compared to 73 and 65 mA for the 0° and 15°-off samples, respectively. For the same reason, the characteristic temperature obtained between 150 and 300 K is 117 K for the 4°-off samples, compared to 113 K and 100 K for the 0° and 15°-off samples, respectively.

Original languageEnglish
Pages (from-to)605-607
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number1 B
DOIs
Publication statusPublished - 1999 Jan 1
EventProceedings of the 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS-98 - Sapporo, Japan
Duration: 1998 May 311998 Jun 4

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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