Room temperature photo-CVD SiO 2 layers on AlGaN and AlGaN/GaN MOS-HFETs

C. K. Wang; S. J. Chang; Y. K. Su; Y. Z. Chiou; T. K. Lin; C. C. Wong; H. L. Liu; S. P. Chang; J. J. Tang

doi:10.1002/pssa.200521299

Room temperature photo-CVD SiO ₂ layers on AlGaN and AlGaN/GaN MOS-HFETs

C. K. Wang, S. J. Chang, Y. K. Su, Y. Z. Chiou, T. K. Lin, C. C. Wong, H. L. Liu, S. P. Chang, J. J. Tang

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

High quality SiO ₂ layers were successfully deposited onto AlGaN by photo-chemical vapor deposition (photo-CVD) using D ₂ lamp as the excitation source at room temperature. The resulting interface state density was only 8.86 × 10 ¹¹ cm ^-2 eV ^-1. With a 2 μm gate, it was found that maximum drain-source current, maximum transconductance (g _m,max) and gate voltage swing (GVS) of the fabricated nitride-based metal-oxide-semiconductor heterostructure field effect transistors (MOS-HFETs) were 225 mA/mm, 33 mS/mm and 6.5 V, respectively. Compared with metal-semiconductor HFETs (MES-HFETs), it was found that noise power density of MOS-HFETs was lower and presented pure 1/f noise with smaller trapping effects.

Original language	English
Pages (from-to)	404-409
Number of pages	6
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	203
Issue number	2
DOIs	https://doi.org/10.1002/pssa.200521299
Publication status	Published - 2006 Feb

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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@article{2731da29c40547e8aef251fbb4aefb69,

title = "Room temperature photo-CVD SiO 2 layers on AlGaN and AlGaN/GaN MOS-HFETs",

abstract = "High quality SiO 2 layers were successfully deposited onto AlGaN by photo-chemical vapor deposition (photo-CVD) using D 2 lamp as the excitation source at room temperature. The resulting interface state density was only 8.86 × 10 11 cm -2 eV -1. With a 2 μm gate, it was found that maximum drain-source current, maximum transconductance (g m,max) and gate voltage swing (GVS) of the fabricated nitride-based metal-oxide-semiconductor heterostructure field effect transistors (MOS-HFETs) were 225 mA/mm, 33 mS/mm and 6.5 V, respectively. Compared with metal-semiconductor HFETs (MES-HFETs), it was found that noise power density of MOS-HFETs was lower and presented pure 1/f noise with smaller trapping effects.",

author = "Wang, {C. K.} and Chang, {S. J.} and Su, {Y. K.} and Chiou, {Y. Z.} and Lin, {T. K.} and Wong, {C. C.} and Liu, {H. L.} and Chang, {S. P.} and Tang, {J. J.}",

year = "2006",

month = feb,

doi = "10.1002/pssa.200521299",

language = "English",

volume = "203",

pages = "404--409",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley-VCH Verlag",

number = "2",

}

TY - JOUR

T1 - Room temperature photo-CVD SiO 2 layers on AlGaN and AlGaN/GaN MOS-HFETs

AU - Wang, C. K.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Chiou, Y. Z.

AU - Lin, T. K.

AU - Wong, C. C.

AU - Liu, H. L.

AU - Chang, S. P.

AU - Tang, J. J.

PY - 2006/2

Y1 - 2006/2

N2 - High quality SiO 2 layers were successfully deposited onto AlGaN by photo-chemical vapor deposition (photo-CVD) using D 2 lamp as the excitation source at room temperature. The resulting interface state density was only 8.86 × 10 11 cm -2 eV -1. With a 2 μm gate, it was found that maximum drain-source current, maximum transconductance (g m,max) and gate voltage swing (GVS) of the fabricated nitride-based metal-oxide-semiconductor heterostructure field effect transistors (MOS-HFETs) were 225 mA/mm, 33 mS/mm and 6.5 V, respectively. Compared with metal-semiconductor HFETs (MES-HFETs), it was found that noise power density of MOS-HFETs was lower and presented pure 1/f noise with smaller trapping effects.

AB - High quality SiO 2 layers were successfully deposited onto AlGaN by photo-chemical vapor deposition (photo-CVD) using D 2 lamp as the excitation source at room temperature. The resulting interface state density was only 8.86 × 10 11 cm -2 eV -1. With a 2 μm gate, it was found that maximum drain-source current, maximum transconductance (g m,max) and gate voltage swing (GVS) of the fabricated nitride-based metal-oxide-semiconductor heterostructure field effect transistors (MOS-HFETs) were 225 mA/mm, 33 mS/mm and 6.5 V, respectively. Compared with metal-semiconductor HFETs (MES-HFETs), it was found that noise power density of MOS-HFETs was lower and presented pure 1/f noise with smaller trapping effects.

UR - http://www.scopus.com/inward/record.url?scp=32144444886&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=32144444886&partnerID=8YFLogxK

U2 - 10.1002/pssa.200521299

DO - 10.1002/pssa.200521299

M3 - Article

AN - SCOPUS:32144444886

SN - 1862-6300

VL - 203

SP - 404

EP - 409

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 2

ER -

Room temperature photo-CVD SiO ₂ layers on AlGaN and AlGaN/GaN MOS-HFETs

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