Room temperature photo-CVD SiO 2 layers on AlGaN and AlGaN/GaN MOS-HFETs

C. K. Wang, S. J. Chang, Y. K. Su, Y. Z. Chiou, T. K. Lin, C. C. Wong, H. L. Liu, S. P. Chang, J. J. Tang

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


High quality SiO 2 layers were successfully deposited onto AlGaN by photo-chemical vapor deposition (photo-CVD) using D 2 lamp as the excitation source at room temperature. The resulting interface state density was only 8.86 × 10 11 cm -2 eV -1. With a 2 μm gate, it was found that maximum drain-source current, maximum transconductance (g m,max) and gate voltage swing (GVS) of the fabricated nitride-based metal-oxide-semiconductor heterostructure field effect transistors (MOS-HFETs) were 225 mA/mm, 33 mS/mm and 6.5 V, respectively. Compared with metal-semiconductor HFETs (MES-HFETs), it was found that noise power density of MOS-HFETs was lower and presented pure 1/f noise with smaller trapping effects.

Original languageEnglish
Pages (from-to)404-409
Number of pages6
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number2
Publication statusPublished - 2006 Feb

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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