Room temperature photoluminescence and ultraviolet raman characterization of boron implanted silicon under various laser annealing conditions

Min Hao Hong, Dung-Ching Perng, Shiu Ko Jang Jian, Woo Sik Yoo

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Room temperature photoluminescence (RTPL) and ultraviolet (UV) Raman spectra from p-Si wafers and low-energy, low-dose boron (B) implanted n-Si wafers, annealed under various laser power densities, were measured. The RTPL intensity from implanted wafers, increased with increasing laser power density. UV Raman spectra showed significant, sudden changes in their shape and intensity around the surface melting condition. The sheet resistance of the implanted wafers was reduced as the laser power density decreased. Steep increase of RTPL intensity and steep reduction of the sheet resistance was measured from the B+ implanted n-Si wafers above surface melting laser annealing conditions. A strong inverse correlation between RTPL intensity and sheet resistance was found for implanted wafers. The RTPL intensity, UV Raman spectra and sheet resistance of p-Si reference wafers behaved quite differently compared to implanted wafers. The RTPL and UV Raman spectroscopy are very promising monitoring techniques for implant annealing processes.

Original languageEnglish
JournalECS Journal of Solid State Science and Technology
Volume1
Issue number6
DOIs
Publication statusPublished - 2012 Dec 1

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Boron
Silicon
Photoluminescence
Sheet resistance
Annealing
Lasers
Raman scattering
Temperature
Melting
Ultraviolet spectroscopy
Raman spectroscopy
Monitoring

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

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title = "Room temperature photoluminescence and ultraviolet raman characterization of boron implanted silicon under various laser annealing conditions",
abstract = "Room temperature photoluminescence (RTPL) and ultraviolet (UV) Raman spectra from p-Si wafers and low-energy, low-dose boron (B) implanted n-Si wafers, annealed under various laser power densities, were measured. The RTPL intensity from implanted wafers, increased with increasing laser power density. UV Raman spectra showed significant, sudden changes in their shape and intensity around the surface melting condition. The sheet resistance of the implanted wafers was reduced as the laser power density decreased. Steep increase of RTPL intensity and steep reduction of the sheet resistance was measured from the B+ implanted n-Si wafers above surface melting laser annealing conditions. A strong inverse correlation between RTPL intensity and sheet resistance was found for implanted wafers. The RTPL intensity, UV Raman spectra and sheet resistance of p-Si reference wafers behaved quite differently compared to implanted wafers. The RTPL and UV Raman spectroscopy are very promising monitoring techniques for implant annealing processes.",
author = "Hong, {Min Hao} and Dung-Ching Perng and Jian, {Shiu Ko Jang} and Yoo, {Woo Sik}",
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T1 - Room temperature photoluminescence and ultraviolet raman characterization of boron implanted silicon under various laser annealing conditions

AU - Hong, Min Hao

AU - Perng, Dung-Ching

AU - Jian, Shiu Ko Jang

AU - Yoo, Woo Sik

PY - 2012/12/1

Y1 - 2012/12/1

N2 - Room temperature photoluminescence (RTPL) and ultraviolet (UV) Raman spectra from p-Si wafers and low-energy, low-dose boron (B) implanted n-Si wafers, annealed under various laser power densities, were measured. The RTPL intensity from implanted wafers, increased with increasing laser power density. UV Raman spectra showed significant, sudden changes in their shape and intensity around the surface melting condition. The sheet resistance of the implanted wafers was reduced as the laser power density decreased. Steep increase of RTPL intensity and steep reduction of the sheet resistance was measured from the B+ implanted n-Si wafers above surface melting laser annealing conditions. A strong inverse correlation between RTPL intensity and sheet resistance was found for implanted wafers. The RTPL intensity, UV Raman spectra and sheet resistance of p-Si reference wafers behaved quite differently compared to implanted wafers. The RTPL and UV Raman spectroscopy are very promising monitoring techniques for implant annealing processes.

AB - Room temperature photoluminescence (RTPL) and ultraviolet (UV) Raman spectra from p-Si wafers and low-energy, low-dose boron (B) implanted n-Si wafers, annealed under various laser power densities, were measured. The RTPL intensity from implanted wafers, increased with increasing laser power density. UV Raman spectra showed significant, sudden changes in their shape and intensity around the surface melting condition. The sheet resistance of the implanted wafers was reduced as the laser power density decreased. Steep increase of RTPL intensity and steep reduction of the sheet resistance was measured from the B+ implanted n-Si wafers above surface melting laser annealing conditions. A strong inverse correlation between RTPL intensity and sheet resistance was found for implanted wafers. The RTPL intensity, UV Raman spectra and sheet resistance of p-Si reference wafers behaved quite differently compared to implanted wafers. The RTPL and UV Raman spectroscopy are very promising monitoring techniques for implant annealing processes.

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