Room temperature photoluminescence (RTPL) and ultraviolet (UV) Raman spectra from p-Si wafers and low-energy, low-dose boron (B) implanted n-Si wafers, annealed under various laser power densities, were measured. The RTPL intensity from implanted wafers, increased with increasing laser power density. UV Raman spectra showed significant, sudden changes in their shape and intensity around the surface melting condition. The sheet resistance of the implanted wafers was reduced as the laser power density decreased. Steep increase of RTPL intensity and steep reduction of the sheet resistance was measured from the B+ implanted n-Si wafers above surface melting laser annealing conditions. A strong inverse correlation between RTPL intensity and sheet resistance was found for implanted wafers. The RTPL intensity, UV Raman spectra and sheet resistance of p-Si reference wafers behaved quite differently compared to implanted wafers. The RTPL and UV Raman spectroscopy are very promising monitoring techniques for implant annealing processes.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials