Room temperature Si δ -growth on Ge incorporating high- K dielectric for metal oxide semiconductor applications

Augustin J. Hong; Masaaki Ogawa; Kang L. Wang; Yong Wang; Jin Zou; Zheng Xu; Yang Yang

doi:10.1063/1.2957476

Room temperature Si δ -growth on Ge incorporating high- K dielectric for metal oxide semiconductor applications

Augustin J. Hong, Masaaki Ogawa, Kang L. Wang, Yong Wang, Jin Zou, Zheng Xu, Yang Yang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A low temperature Al₂O₃/4 monolayer amorphous Si gate stack process was demonstrated on p -type Ge wafers using atomic layer deposition and molecular beam epitaxy. Multifrequency capacitance-voltage (C-V) and current-voltage (I-V) characteristics showed excellent electrical properties of the Pt Al₂O₃/4 ML SiGe metal oxide semiconductor capacitor. No kinks from 1 MHz to 4 kHz and a leakage current density of 2.6× 10^-6 A cm² at 1 V with an equivalent oxide thickness of 2.5 nm. The interface characterization using a conductance method showed that interface trap density at the near midgap was 8× 10 ¹² eV^-1 cm^-2 and a mean capture cross section of holes was extracted to be 10^-16 cm².

Original language	English
Article number	023501
Journal	Applied Physics Letters
Volume	93
Issue number	2
DOIs	https://doi.org/10.1063/1.2957476
Publication status	Published - 2008 Jul 14

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2957476

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title = "Room temperature Si δ -growth on Ge incorporating high- K dielectric for metal oxide semiconductor applications",

abstract = "A low temperature Al2O3/4 monolayer amorphous Si gate stack process was demonstrated on p -type Ge wafers using atomic layer deposition and molecular beam epitaxy. Multifrequency capacitance-voltage (C-V) and current-voltage (I-V) characteristics showed excellent electrical properties of the Pt Al2O3/4 ML SiGe metal oxide semiconductor capacitor. No kinks from 1 MHz to 4 kHz and a leakage current density of 2.6× 10-6 A cm2 at 1 V with an equivalent oxide thickness of 2.5 nm. The interface characterization using a conductance method showed that interface trap density at the near midgap was 8× 10 12 eV-1 cm-2 and a mean capture cross section of holes was extracted to be 10-16 cm2.",

author = "Hong, {Augustin J.} and Masaaki Ogawa and Wang, {Kang L.} and Yong Wang and Jin Zou and Zheng Xu and Yang Yang",

note = "Funding Information: This research was financially supported by the NSF IGERT: Materials Creation Training Program (MCTP) (DGE-11443), the California NanoSystems Institute (CNSI), and Australia Research Council.",

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doi = "10.1063/1.2957476",

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journal = "Applied Physics Letters",

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T1 - Room temperature Si δ -growth on Ge incorporating high- K dielectric for metal oxide semiconductor applications

AU - Hong, Augustin J.

AU - Ogawa, Masaaki

AU - Wang, Kang L.

AU - Wang, Yong

AU - Zou, Jin

AU - Xu, Zheng

AU - Yang, Yang

N1 - Funding Information: This research was financially supported by the NSF IGERT: Materials Creation Training Program (MCTP) (DGE-11443), the California NanoSystems Institute (CNSI), and Australia Research Council.

PY - 2008/7/14

Y1 - 2008/7/14

N2 - A low temperature Al2O3/4 monolayer amorphous Si gate stack process was demonstrated on p -type Ge wafers using atomic layer deposition and molecular beam epitaxy. Multifrequency capacitance-voltage (C-V) and current-voltage (I-V) characteristics showed excellent electrical properties of the Pt Al2O3/4 ML SiGe metal oxide semiconductor capacitor. No kinks from 1 MHz to 4 kHz and a leakage current density of 2.6× 10-6 A cm2 at 1 V with an equivalent oxide thickness of 2.5 nm. The interface characterization using a conductance method showed that interface trap density at the near midgap was 8× 10 12 eV-1 cm-2 and a mean capture cross section of holes was extracted to be 10-16 cm2.

AB - A low temperature Al2O3/4 monolayer amorphous Si gate stack process was demonstrated on p -type Ge wafers using atomic layer deposition and molecular beam epitaxy. Multifrequency capacitance-voltage (C-V) and current-voltage (I-V) characteristics showed excellent electrical properties of the Pt Al2O3/4 ML SiGe metal oxide semiconductor capacitor. No kinks from 1 MHz to 4 kHz and a leakage current density of 2.6× 10-6 A cm2 at 1 V with an equivalent oxide thickness of 2.5 nm. The interface characterization using a conductance method showed that interface trap density at the near midgap was 8× 10 12 eV-1 cm-2 and a mean capture cross section of holes was extracted to be 10-16 cm2.

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JF - Applied Physics Letters

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Room temperature Si δ -growth on Ge incorporating high- K dielectric for metal oxide semiconductor applications

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