ROUGHENING METHOD AND METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE HAVING ROUGHENED SURFACE

Shui-Jinn Wang (Inventor)

Research output: Patent

Abstract

The present invention relates to a novel method for roughening an epitaxy structure layer, including: providing an epitaxy structure layer; and etching a surface of the epitaxy structure layer by an excimer laser having an energy density of 1000 mJ/cm2 or less to form a roughened surface. In addition, the present invention further provides a method for manufacturing a light-emitting diode having a roughened surface. Accordingly, the present invention can resolve the conventional problems of process complexity, time consumption and high cost.
Translated title of the contribution粗化方法及具粗化表面之發光二極體製備方法
Original languageEnglish
Patent number8551869
Publication statusPublished - 2012 Aug 23

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