Abstract
The present invention relates to a novel method for roughening an epitaxy structure layer, including: providing an epitaxy structure layer; and etching a surface of the epitaxy structure layer by an excimer laser having an energy density of 1000 mJ/cm2 or less to form a roughened surface. In addition, the present invention further provides a method for manufacturing a light-emitting diode having a roughened surface. Accordingly, the present invention can resolve the conventional problems of process complexity, time consumption and high cost.
| Translated title of the contribution | 粗化方法及具粗化表面之發光二極體製備方法 |
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| Original language | English |
| Patent number | 8551869 |
| Publication status | Published - 2012 Aug 23 |