Rounding and taper fin effect of FinFET varactors observed using three-dimensional simulation model

Chien Hung Chen, Ying Chien Fang, Chung Hao Chiang, Sheng Yuan Chu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The capacitance-voltage electrical characteristics of fin field-effect transistor (FinFET) varactors, which have fins with different taper angles and rounding radiuses, are investigated. By fitting the results of a three-dimensional correction simulation with those of an experimentally fabricated FinFET varactor, the two key factors of process simulations (taper angle and rounding radius r) are extracted. It is found that the capacitance of the FinFET varactor changes when the fin cross-sectional profile varies. The examination presented here is useful in the fabrication of FinFETs. It clarifies the fin cross-sectional profile effect on the FinFET varactor capacitance.

Original languageEnglish
Article number078001
JournalJapanese Journal of Applied Physics
Volume53
Issue number7
DOIs
Publication statusPublished - 2014 Jul

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Rounding and taper fin effect of FinFET varactors observed using three-dimensional simulation model'. Together they form a unique fingerprint.

  • Cite this