Abstract
The properties of Ru(5 nm)/WCoCN(5 nm) stacked layers as a seedless Cu barrier system has been investigated. Its barrier properties compared to single 10 nm Ru film were investigated by sheet resistances, X-ray diffraction patterns, transmission electron microscopy, energy dispersive spectrometry spot analysis, line scans, and leakage currents. Thermal stability of the Ru(5 nm)/WCoCN(5 nm) improved by over 100 °C than that of Ru(10 nm) barrier. The results show that Ru(5 nm)/WCoCN(5 nm) can effectively block Cu diffusion up to 600 °C for 30 min. The Ru(5 nm)/WCoCN(5 nm) bilayer is a great Cu barrier candidate for seedless Cu interconnects.
| Original language | English |
|---|---|
| Pages (from-to) | 688-692 |
| Number of pages | 5 |
| Journal | Applied Surface Science |
| Volume | 256 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2009 Nov 15 |
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All Science Journal Classification (ASJC) codes
- Surfaces, Coatings and Films
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Ru/WCoCN as a seedless Cu barrier system for advanced Cu metallization. / Perng, Dung-Ching; Yeh, Jia Bin; Hsu, Kuo Chung.
In: Applied Surface Science, Vol. 256, No. 3, 15.11.2009, p. 688-692.Research output: Contribution to journal › Article
TY - JOUR
T1 - Ru/WCoCN as a seedless Cu barrier system for advanced Cu metallization
AU - Perng, Dung-Ching
AU - Yeh, Jia Bin
AU - Hsu, Kuo Chung
PY - 2009/11/15
Y1 - 2009/11/15
N2 - The properties of Ru(5 nm)/WCoCN(5 nm) stacked layers as a seedless Cu barrier system has been investigated. Its barrier properties compared to single 10 nm Ru film were investigated by sheet resistances, X-ray diffraction patterns, transmission electron microscopy, energy dispersive spectrometry spot analysis, line scans, and leakage currents. Thermal stability of the Ru(5 nm)/WCoCN(5 nm) improved by over 100 °C than that of Ru(10 nm) barrier. The results show that Ru(5 nm)/WCoCN(5 nm) can effectively block Cu diffusion up to 600 °C for 30 min. The Ru(5 nm)/WCoCN(5 nm) bilayer is a great Cu barrier candidate for seedless Cu interconnects.
AB - The properties of Ru(5 nm)/WCoCN(5 nm) stacked layers as a seedless Cu barrier system has been investigated. Its barrier properties compared to single 10 nm Ru film were investigated by sheet resistances, X-ray diffraction patterns, transmission electron microscopy, energy dispersive spectrometry spot analysis, line scans, and leakage currents. Thermal stability of the Ru(5 nm)/WCoCN(5 nm) improved by over 100 °C than that of Ru(10 nm) barrier. The results show that Ru(5 nm)/WCoCN(5 nm) can effectively block Cu diffusion up to 600 °C for 30 min. The Ru(5 nm)/WCoCN(5 nm) bilayer is a great Cu barrier candidate for seedless Cu interconnects.
UR - http://www.scopus.com/inward/record.url?scp=71849089371&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=71849089371&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2009.08.039
DO - 10.1016/j.apsusc.2009.08.039
M3 - Article
VL - 256
SP - 688
EP - 692
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 3
ER -