Ru/WCoCN as a seedless Cu barrier system for advanced Cu metallization

Dung Ching Perng; Jia Bin Yeh; Kuo Chung Hsu

doi:10.1016/j.apsusc.2009.08.039

Ru/WCoCN as a seedless Cu barrier system for advanced Cu metallization

Dung Ching Perng, Jia Bin Yeh, Kuo Chung Hsu

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The properties of Ru(5 nm)/WCoCN(5 nm) stacked layers as a seedless Cu barrier system has been investigated. Its barrier properties compared to single 10 nm Ru film were investigated by sheet resistances, X-ray diffraction patterns, transmission electron microscopy, energy dispersive spectrometry spot analysis, line scans, and leakage currents. Thermal stability of the Ru(5 nm)/WCoCN(5 nm) improved by over 100 °C than that of Ru(10 nm) barrier. The results show that Ru(5 nm)/WCoCN(5 nm) can effectively block Cu diffusion up to 600 °C for 30 min. The Ru(5 nm)/WCoCN(5 nm) bilayer is a great Cu barrier candidate for seedless Cu interconnects.

Original language	English
Pages (from-to)	688-692
Number of pages	5
Journal	Applied Surface Science
Volume	256
Issue number	3
DOIs	https://doi.org/10.1016/j.apsusc.2009.08.039
Publication status	Published - 2009 Nov 15

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2009.08.039

Fingerprint Dive into the research topics of 'Ru/WCoCN as a seedless Cu barrier system for advanced Cu metallization'. Together they form a unique fingerprint.

Cite this

@article{1480f14c7bb8425aa5d3da97062e4127,

title = "Ru/WCoCN as a seedless Cu barrier system for advanced Cu metallization",

abstract = "The properties of Ru(5 nm)/WCoCN(5 nm) stacked layers as a seedless Cu barrier system has been investigated. Its barrier properties compared to single 10 nm Ru film were investigated by sheet resistances, X-ray diffraction patterns, transmission electron microscopy, energy dispersive spectrometry spot analysis, line scans, and leakage currents. Thermal stability of the Ru(5 nm)/WCoCN(5 nm) improved by over 100 °C than that of Ru(10 nm) barrier. The results show that Ru(5 nm)/WCoCN(5 nm) can effectively block Cu diffusion up to 600 °C for 30 min. The Ru(5 nm)/WCoCN(5 nm) bilayer is a great Cu barrier candidate for seedless Cu interconnects.",

author = "Perng, {Dung Ching} and Yeh, {Jia Bin} and Hsu, {Kuo Chung}",

year = "2009",

month = nov,

day = "15",

doi = "10.1016/j.apsusc.2009.08.039",

language = "English",

volume = "256",

pages = "688--692",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "3",

}

TY - JOUR

T1 - Ru/WCoCN as a seedless Cu barrier system for advanced Cu metallization

AU - Perng, Dung Ching

AU - Yeh, Jia Bin

AU - Hsu, Kuo Chung

PY - 2009/11/15

Y1 - 2009/11/15

N2 - The properties of Ru(5 nm)/WCoCN(5 nm) stacked layers as a seedless Cu barrier system has been investigated. Its barrier properties compared to single 10 nm Ru film were investigated by sheet resistances, X-ray diffraction patterns, transmission electron microscopy, energy dispersive spectrometry spot analysis, line scans, and leakage currents. Thermal stability of the Ru(5 nm)/WCoCN(5 nm) improved by over 100 °C than that of Ru(10 nm) barrier. The results show that Ru(5 nm)/WCoCN(5 nm) can effectively block Cu diffusion up to 600 °C for 30 min. The Ru(5 nm)/WCoCN(5 nm) bilayer is a great Cu barrier candidate for seedless Cu interconnects.

AB - The properties of Ru(5 nm)/WCoCN(5 nm) stacked layers as a seedless Cu barrier system has been investigated. Its barrier properties compared to single 10 nm Ru film were investigated by sheet resistances, X-ray diffraction patterns, transmission electron microscopy, energy dispersive spectrometry spot analysis, line scans, and leakage currents. Thermal stability of the Ru(5 nm)/WCoCN(5 nm) improved by over 100 °C than that of Ru(10 nm) barrier. The results show that Ru(5 nm)/WCoCN(5 nm) can effectively block Cu diffusion up to 600 °C for 30 min. The Ru(5 nm)/WCoCN(5 nm) bilayer is a great Cu barrier candidate for seedless Cu interconnects.

UR - http://www.scopus.com/inward/record.url?scp=71849089371&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=71849089371&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2009.08.039

DO - 10.1016/j.apsusc.2009.08.039

M3 - Article

AN - SCOPUS:71849089371

VL - 256

SP - 688

EP - 692

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 3

ER -