Ru/WCoCN as a seedless Cu barrier system for advanced Cu metallization

Dung-Ching Perng, Jia Bin Yeh, Kuo Chung Hsu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The properties of Ru(5 nm)/WCoCN(5 nm) stacked layers as a seedless Cu barrier system has been investigated. Its barrier properties compared to single 10 nm Ru film were investigated by sheet resistances, X-ray diffraction patterns, transmission electron microscopy, energy dispersive spectrometry spot analysis, line scans, and leakage currents. Thermal stability of the Ru(5 nm)/WCoCN(5 nm) improved by over 100 °C than that of Ru(10 nm) barrier. The results show that Ru(5 nm)/WCoCN(5 nm) can effectively block Cu diffusion up to 600 °C for 30 min. The Ru(5 nm)/WCoCN(5 nm) bilayer is a great Cu barrier candidate for seedless Cu interconnects.

Original languageEnglish
Pages (from-to)688-692
Number of pages5
JournalApplied Surface Science
Volume256
Issue number3
DOIs
Publication statusPublished - 2009 Nov 15

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Sheet resistance
Metallizing
Leakage currents
Diffraction patterns
Spectrometry
Thermodynamic stability
Transmission electron microscopy
X ray diffraction

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Perng, Dung-Ching ; Yeh, Jia Bin ; Hsu, Kuo Chung. / Ru/WCoCN as a seedless Cu barrier system for advanced Cu metallization. In: Applied Surface Science. 2009 ; Vol. 256, No. 3. pp. 688-692.
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Ru/WCoCN as a seedless Cu barrier system for advanced Cu metallization. / Perng, Dung-Ching; Yeh, Jia Bin; Hsu, Kuo Chung.

In: Applied Surface Science, Vol. 256, No. 3, 15.11.2009, p. 688-692.

Research output: Contribution to journalArticle

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