S-Shaped Negative Differential Resistance in a Single GaAs Quantum-Well Switching Device

Wen Chau Liu; Ching Hsi Lin; Chung Yih Sun; Wen Shiung Lour

doi:10.1143/JJAP.29.L1385

S-Shaped Negative Differential Resistance in a Single GaAs Quantum-Well Switching Device

Wen Chau Liu, Ching Hsi Lin, Chung Yih Sun, Wen Shiung Lour

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A new GaAs-AlGaAs switching device with planar-doped barriers and a GaAs quantum well grown by molecular beam epitaxy and exhibiting S-shaped negative differential resistance (NDR) has been fabricated. The NDR phenomenon is attributed mainly to impact ionization within the undoped collector region. Furthermore, the studied NDR properties are very sensitive to the environmental temperature.

Original language	English
Pages (from-to)	L1385-L1387
Journal	Japanese Journal of Applied Physics
Volume	29
Issue number	8
DOIs	https://doi.org/10.1143/JJAP.29.L1385
Publication status	Published - 1990 Aug

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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abstract = "A new GaAs-AlGaAs switching device with planar-doped barriers and a GaAs quantum well grown by molecular beam epitaxy and exhibiting S-shaped negative differential resistance (NDR) has been fabricated. The NDR phenomenon is attributed mainly to impact ionization within the undoped collector region. Furthermore, the studied NDR properties are very sensitive to the environmental temperature.",

author = "Liu, {Wen Chau} and Lin, {Ching Hsi} and Sun, {Chung Yih} and Lour, {Wen Shiung}",

year = "1990",

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AU - Lour, Wen Shiung

PY - 1990/8

Y1 - 1990/8

N2 - A new GaAs-AlGaAs switching device with planar-doped barriers and a GaAs quantum well grown by molecular beam epitaxy and exhibiting S-shaped negative differential resistance (NDR) has been fabricated. The NDR phenomenon is attributed mainly to impact ionization within the undoped collector region. Furthermore, the studied NDR properties are very sensitive to the environmental temperature.

AB - A new GaAs-AlGaAs switching device with planar-doped barriers and a GaAs quantum well grown by molecular beam epitaxy and exhibiting S-shaped negative differential resistance (NDR) has been fabricated. The NDR phenomenon is attributed mainly to impact ionization within the undoped collector region. Furthermore, the studied NDR properties are very sensitive to the environmental temperature.

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JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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ER -

S-Shaped Negative Differential Resistance in a Single GaAs Quantum-Well Switching Device

Abstract

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