S-Shaped Negative Differential Resistance in a Single GaAs Quantum-Well Switching Device

Wen Chau Liu, Ching Hsi Lin, Chung Yih Sun, Wen Shiung Lour

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

A new GaAs-AlGaAs switching device with planar-doped barriers and a GaAs quantum well grown by molecular beam epitaxy and exhibiting S-shaped negative differential resistance (NDR) has been fabricated. The NDR phenomenon is attributed mainly to impact ionization within the undoped collector region. Furthermore, the studied NDR properties are very sensitive to the environmental temperature.

Original languageEnglish
Pages (from-to)L1385-L1387
JournalJapanese Journal of Applied Physics
Volume29
Issue number8
DOIs
Publication statusPublished - 1990 Aug

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'S-Shaped Negative Differential Resistance in a Single GaAs Quantum-Well Switching Device'. Together they form a unique fingerprint.

Cite this