Abstract
A new GaAs-AlGaAs switching device with planar-doped barriers and a GaAs quantum well grown by molecular beam epitaxy and exhibiting S-shaped negative differential resistance (NDR) has been fabricated. The NDR phenomenon is attributed mainly to impact ionization within the undoped collector region. Furthermore, the studied NDR properties are very sensitive to the environmental temperature.
Original language | English |
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Pages (from-to) | L1385-L1387 |
Journal | Japanese journal of applied physics |
Volume | 29 |
Issue number | 8 |
DOIs | |
Publication status | Published - 1990 Aug |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)