Scalable RF MIS varactor model

C. Y. Su; B. M. Tseng; S. J. Chang; L. P. Chen

doi:10.1049/el:20010510

Scalable RF MIS varactor model

C. Y. Su, B. M. Tseng, S. J. Chang, L. P. Chen

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A scalable varactor model based on the equations in the BSIM3v3 model (Berkeley short-channel IGFET model) is presented to model the behaviour of a silicon-based metal-insulatorsemiconductor (MIS) varactor with different device geometries and bias conditions at different operation frequencies. The root mean square (RMS) errors of the s-parameters between the measured and simulated data are less than 3%. The scalable model provides satisfactory performance prediction for realising silicon radio frequency integrated circuits (RFICs).

Original language	English
Pages (from-to)	760-761
Number of pages	2
Journal	Electronics Letters
Volume	37
Issue number	12
DOIs	https://doi.org/10.1049/el:20010510
Publication status	Published - 2001 Jun 7

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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