Scalable RF MIS varactor model

C. Y. Su, B. M. Tseng, S. J. Chang, L. P. Chen

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


A scalable varactor model based on the equations in the BSIM3v3 model (Berkeley short-channel IGFET model) is presented to model the behaviour of a silicon-based metal-insulatorsemiconductor (MIS) varactor with different device geometries and bias conditions at different operation frequencies. The root mean square (RMS) errors of the s-parameters between the measured and simulated data are less than 3%. The scalable model provides satisfactory performance prediction for realising silicon radio frequency integrated circuits (RFICs).

Original languageEnglish
Pages (from-to)760-761
Number of pages2
JournalElectronics Letters
Issue number12
Publication statusPublished - 2001 Jun 7

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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