Scalable RF MIS varactor model

C. Y. Su; B. M. Tseng; S. J. Chang; L. P. Chen

doi:10.1049/el:20010510

Scalable RF MIS varactor model

C. Y. Su, B. M. Tseng, S. J. Chang, L. P. Chen

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A scalable varactor model based on the equations in the BSIM3v3 model (Berkeley short-channel IGFET model) is presented to model the behaviour of a silicon-based metal-insulatorsemiconductor (MIS) varactor with different device geometries and bias conditions at different operation frequencies. The root mean square (RMS) errors of the s-parameters between the measured and simulated data are less than 3%. The scalable model provides satisfactory performance prediction for realising silicon radio frequency integrated circuits (RFICs).

Original language	English
Pages (from-to)	760-761
Number of pages	2
Journal	Electronics Letters
Volume	37
Issue number	12
DOIs	https://doi.org/10.1049/el:20010510
Publication status	Published - 2001 Jun 7

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:20010510

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title = "Scalable RF MIS varactor model",

abstract = "A scalable varactor model based on the equations in the BSIM3v3 model (Berkeley short-channel IGFET model) is presented to model the behaviour of a silicon-based metal-insulatorsemiconductor (MIS) varactor with different device geometries and bias conditions at different operation frequencies. The root mean square (RMS) errors of the s-parameters between the measured and simulated data are less than 3%. The scalable model provides satisfactory performance prediction for realising silicon radio frequency integrated circuits (RFICs).",

author = "Su, {C. Y.} and Tseng, {B. M.} and Chang, {S. J.} and Chen, {L. P.}",

year = "2001",

month = jun,

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journal = "Electronics Letters",

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AU - Su, C. Y.

AU - Tseng, B. M.

AU - Chang, S. J.

AU - Chen, L. P.

PY - 2001/6/7

Y1 - 2001/6/7

N2 - A scalable varactor model based on the equations in the BSIM3v3 model (Berkeley short-channel IGFET model) is presented to model the behaviour of a silicon-based metal-insulatorsemiconductor (MIS) varactor with different device geometries and bias conditions at different operation frequencies. The root mean square (RMS) errors of the s-parameters between the measured and simulated data are less than 3%. The scalable model provides satisfactory performance prediction for realising silicon radio frequency integrated circuits (RFICs).

AB - A scalable varactor model based on the equations in the BSIM3v3 model (Berkeley short-channel IGFET model) is presented to model the behaviour of a silicon-based metal-insulatorsemiconductor (MIS) varactor with different device geometries and bias conditions at different operation frequencies. The root mean square (RMS) errors of the s-parameters between the measured and simulated data are less than 3%. The scalable model provides satisfactory performance prediction for realising silicon radio frequency integrated circuits (RFICs).

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JF - Electronics Letters

SN - 0013-5194

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Scalable RF MIS varactor model

Abstract

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