Scheme for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors

J. Appenzeller, R. Martel, P. Solomon, K. Chan, Ph Avouris, J. Knoch, J. Benedict, M. Tanner, S. Thomas, K. L. Wang, J. A. Del Alamo

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

We present a scheme for the fabrication of ultrashort channel length metal-oxide-semiconductor field-effect transistors (MOSFETs) involving nanolithography and molecular-beam epitaxy. The active channel is undoped and is defined by a combination of nanometer-scale patterning and anisotropic etching of an n++ layer grown on a silicon on insulator wafer. The method is self-limiting and can produce MOSFET devices with channel lengths of less than 10 nm. Measurements on the first batch of n-MOSFET devices fabricated with this approach show very good output characteristics and good control of short-channel effects.

Original languageEnglish
Pages (from-to)298-300
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number2
DOIs
Publication statusPublished - 2000 Jul 10

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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