SCHOTTKY BARRIER CHARACTERIZATION OF EPITAXIAL CoSi//2 ON LT AN BR 111 RT AN BR Si.

In this paper, the authors report results of barrier height measurements of CoSi//2 on Si. Schottky barrier heights are measured using I-V and C-V techniques and Deep Level Transient Spectroscopy has been employed to investigate the likelihood of Co diffusion into the substrate during the growth of CoSi//2. The Schottky contacts of CoSi//2 to Si were fabricated by metal deposition of circular dots followed by mesa etching to form diodes with 20 mil diameter. All the silicide films were grown using electron gun evaporation in an ultra high vacuum condition with a base pressure of 10** minus **1**0 torr.