SCHOTTKY BARRIER CHARACTERIZATION OF MBE EPITAXIAL CoSi//2 ON less than 111 greater than Si.

Electrical properties of the epitaxial CoSi//2/Si heterostructures have been studied. Schottky barrier heights of CoSi//2 epilayers grown under ultra high vacuum conditions by molecular beam epitaxy (MBE) and solid phase epitaxy (SPE) on n-type less than 111 greater than Si are determined using C(V) and I(V) methods to be 0. 68 and 0. 66 eV, respectively. No electrical active defects are found within the detection limit by DLTS for CoSi//2 films grown by the MBE method. On the other hand, one major peak at E//C - 0. 57 eV has been consistently observed in DLTS spectra for those Schottky diodes grown by the SPE method. The spatial defect distribution of this defect has also been obtained. Interface carbon induced defects with Co and their complexes are among possible speculated origins for this defect level. Further effort is needed to identify the origin of the defect.