@inproceedings{b216522f53b74d7f824ab3cca7dcbdfc,
title = "Schottky barrier free NiSi/Si junction technology by Yb-implantation for 1xnm CMOS applications",
abstract = "This is the first report of 0 eV or negative Schottky barrier height for electrons down to 100 K, even on lightly doped Si. It is achieved by energy barrier engineering with Yb doping at NiSi/Si interface. Ideal unity rectification ratio and reasonable sheet resistance are also achieved in this study. This technology can potentially boost future MOSFET performance.",
author = "Chen, {Szu Hung} and Chen, {Min Cheng} and Chen, {Hung Min} and Shih, {Chuan Feng} and Wu, {Shih Hsiung} and Ho, {Yi Ying} and Lai, {Yu Sheng} and Chen, {Shou Ji} and Kent Liu and Chen, {Bo Yuan} and Lai, {Dong Yen} and Lin, {Chang Hsien} and Lin, {Chia Yi} and Hsueh, {Fu Kuo} and Wu, {Chi Ming} and Hsu, {Cho Lun} and Chiu, {Wen Cheng} and Chen, {Chun Chi} and Andy Liu and Hsu, {Ching Tai} and Wu, {Cheng San} and Lee, {Mei Yi} and Chou, {Tong Huan} and Yao, {Jie Yi} and Shen, {Yi Ling} and Hsu, {Qiong Zi} and Lin, {Kun Lin} and Wu, {Chien Ting} and Kuo, {Mei Ling} and Yang, {Chi Hui} and Wu, {Wen Fa} and Chiahua Ho and Chenming Hu and Yang, {Fu Liang}",
year = "2013",
doi = "10.1109/VLSI-TSA.2013.6545608",
language = "English",
isbn = "9781467330817",
series = "2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013",
booktitle = "2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013",
note = "2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 ; Conference date: 22-04-2013 Through 24-04-2013",
}