Schottky barrier free NiSi/Si junction technology by Yb-implantation for 1xnm CMOS applications

Szu Hung Chen, Min Cheng Chen, Hung Min Chen, Chuan Feng Shih, Shih Hsiung Wu, Yi Ying Ho, Yu Sheng Lai, Shou Ji Chen, Kent Liu, Bo Yuan Chen, Dong Yen Lai, Chang Hsien Lin, Chia Yi Lin, Fu Kuo Hsueh, Chi Ming Wu, Cho Lun Hsu, Wen Cheng Chiu, Chun Chi Chen, Andy Liu, Ching Tai HsuCheng San Wu, Mei Yi Lee, Tong Huan Chou, Jie Yi Yao, Yi Ling Shen, Qiong Zi Hsu, Kun Lin Lin, Chien Ting Wu, Mei Ling Kuo, Chi Hui Yang, Wen Fa Wu, Chiahua Ho, Chenming Hu, Fu Liang Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This is the first report of 0 eV or negative Schottky barrier height for electrons down to 100 K, even on lightly doped Si. It is achieved by energy barrier engineering with Yb doping at NiSi/Si interface. Ideal unity rectification ratio and reasonable sheet resistance are also achieved in this study. This technology can potentially boost future MOSFET performance.

Original languageEnglish
Title of host publication2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
DOIs
Publication statusPublished - 2013 Aug 12
Event2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 - Hsinchu, Taiwan
Duration: 2013 Apr 222013 Apr 24

Publication series

Name2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

Other

Other2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
CountryTaiwan
CityHsinchu
Period13-04-2213-04-24

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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