Schottky barrier free NiSi/Si junction technology by Yb-implantation for 1xnm CMOS applications

Szu Hung Chen; Min Cheng Chen; Hung Min Chen; Chuan Feng Shih; Shih Hsiung Wu; Yi Ying Ho; Yu Sheng Lai; Shou Ji Chen; Kent Liu; Bo Yuan Chen; Dong Yen Lai; Chang Hsien Lin; Chia Yi Lin; Fu Kuo Hsueh; Chi Ming Wu; Cho Lun Hsu; Wen Cheng Chiu; Chun Chi Chen; Andy Liu; Ching Tai Hsu; Cheng San Wu; Mei Yi Lee; Tong Huan Chou; Jie Yi Yao; Yi Ling Shen; Qiong Zi Hsu; Kun Lin Lin; Chien Ting Wu; Mei Ling Kuo; Chi Hui Yang; Wen Fa Wu; Chiahua Ho; Chenming Hu; Fu Liang Yang

doi:10.1109/VLSI-TSA.2013.6545608

Schottky barrier free NiSi/Si junction technology by Yb-implantation for 1xnm CMOS applications

Szu Hung Chen
, Min Cheng Chen
, Hung Min Chen
, Chuan Feng Shih
, Shih Hsiung Wu
, Yi Ying Ho
, Yu Sheng Lai
, Shou Ji Chen
, Kent Liu
, Bo Yuan Chen
, Dong Yen Lai
, Chang Hsien Lin
, Chia Yi Lin
, Fu Kuo Hsueh
, Chi Ming Wu
, Cho Lun Hsu
, Wen Cheng Chiu
, Chun Chi Chen
, Andy Liu
, Ching Tai Hsu

Cheng San Wu, Mei Yi Lee, Tong Huan Chou, Jie Yi Yao, Yi Ling Shen, Qiong Zi Hsu, Kun Lin Lin, Chien Ting Wu, Mei Ling Kuo, Chi Hui Yang, Wen Fa Wu, Chiahua Ho, Chenming Hu, Fu Liang Yang

Doctoral Degree Program on Nano-Integrated-Circuit Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

This is the first report of 0 eV or negative Schottky barrier height for electrons down to 100 K, even on lightly doped Si. It is achieved by energy barrier engineering with Yb doping at NiSi/Si interface. Ideal unity rectification ratio and reasonable sheet resistance are also achieved in this study. This technology can potentially boost future MOSFET performance.

Original language	English
Title of host publication	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
DOIs	https://doi.org/10.1109/VLSI-TSA.2013.6545608
Publication status	Published - 2013
Event	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 - Hsinchu, Taiwan Duration: 2013 Apr 22 → 2013 Apr 24

Publication series

Name	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

Other

Other	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
Country/Territory	Taiwan
City	Hsinchu
Period	13-04-22 → 13-04-24

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/VLSI-TSA.2013.6545608

Cite this

Chen, S. H., Chen, M. C., Chen, H. M., Shih, C. F., Wu, S. H., Ho, Y. Y., Lai, Y. S., Chen, S. J., Liu, K., Chen, B. Y., Lai, D. Y., Lin, C. H., Lin, C. Y., Hsueh, F. K., Wu, C. M., Hsu, C. L., Chiu, W. C., Chen, C. C., Liu, A., ... Yang, F. L. (2013). Schottky barrier free NiSi/Si junction technology by Yb-implantation for 1xnm CMOS applications. In 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 Article 6545608 (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013). https://doi.org/10.1109/VLSI-TSA.2013.6545608

@inproceedings{b216522f53b74d7f824ab3cca7dcbdfc,

title = "Schottky barrier free NiSi/Si junction technology by Yb-implantation for 1xnm CMOS applications",

abstract = "This is the first report of 0 eV or negative Schottky barrier height for electrons down to 100 K, even on lightly doped Si. It is achieved by energy barrier engineering with Yb doping at NiSi/Si interface. Ideal unity rectification ratio and reasonable sheet resistance are also achieved in this study. This technology can potentially boost future MOSFET performance.",

author = "Chen, \{Szu Hung\} and Chen, \{Min Cheng\} and Chen, \{Hung Min\} and Shih, \{Chuan Feng\} and Wu, \{Shih Hsiung\} and Ho, \{Yi Ying\} and Lai, \{Yu Sheng\} and Chen, \{Shou Ji\} and Kent Liu and Chen, \{Bo Yuan\} and Lai, \{Dong Yen\} and Lin, \{Chang Hsien\} and Lin, \{Chia Yi\} and Hsueh, \{Fu Kuo\} and Wu, \{Chi Ming\} and Hsu, \{Cho Lun\} and Chiu, \{Wen Cheng\} and Chen, \{Chun Chi\} and Andy Liu and Hsu, \{Ching Tai\} and Wu, \{Cheng San\} and Lee, \{Mei Yi\} and Chou, \{Tong Huan\} and Yao, \{Jie Yi\} and Shen, \{Yi Ling\} and Hsu, \{Qiong Zi\} and Lin, \{Kun Lin\} and Wu, \{Chien Ting\} and Kuo, \{Mei Ling\} and Yang, \{Chi Hui\} and Wu, \{Wen Fa\} and Chiahua Ho and Chenming Hu and Yang, \{Fu Liang\}",

year = "2013",

doi = "10.1109/VLSI-TSA.2013.6545608",

language = "English",

isbn = "9781467330817",

series = "2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013",

booktitle = "2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013",

note = "2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 ; Conference date: 22-04-2013 Through 24-04-2013",

}

Chen, SH, Chen, MC, Chen, HM, Shih, CF, Wu, SH, Ho, YY, Lai, YS, Chen, SJ, Liu, K, Chen, BY, Lai, DY, Lin, CH, Lin, CY, Hsueh, FK, Wu, CM, Hsu, CL, Chiu, WC, Chen, CC, Liu, A, Hsu, CT, Wu, CS, Lee, MY, Chou, TH, Yao, JY, Shen, YL, Hsu, QZ, Lin, KL, Wu, CT, Kuo, ML, Yang, CH, Wu, WF, Ho, C, Hu, C & Yang, FL 2013, Schottky barrier free NiSi/Si junction technology by Yb-implantation for 1xnm CMOS applications. in 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013., 6545608, 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013, 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013, Hsinchu, Taiwan, 13-04-22. https://doi.org/10.1109/VLSI-TSA.2013.6545608

Schottky barrier free NiSi/Si junction technology by Yb-implantation for 1xnm CMOS applications. / Chen, Szu Hung; Chen, Min Cheng; Chen, Hung Min et al.
2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013. 2013. 6545608 (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Schottky barrier free NiSi/Si junction technology by Yb-implantation for 1xnm CMOS applications

AU - Chen, Szu Hung

AU - Chen, Min Cheng

AU - Chen, Hung Min

AU - Shih, Chuan Feng

AU - Wu, Shih Hsiung

AU - Ho, Yi Ying

AU - Lai, Yu Sheng

AU - Chen, Shou Ji

AU - Liu, Kent

AU - Chen, Bo Yuan

AU - Lai, Dong Yen

AU - Lin, Chang Hsien

AU - Lin, Chia Yi

AU - Hsueh, Fu Kuo

AU - Wu, Chi Ming

AU - Hsu, Cho Lun

AU - Chiu, Wen Cheng

AU - Chen, Chun Chi

AU - Liu, Andy

AU - Hsu, Ching Tai

AU - Wu, Cheng San

AU - Lee, Mei Yi

AU - Chou, Tong Huan

AU - Yao, Jie Yi

AU - Shen, Yi Ling

AU - Hsu, Qiong Zi

AU - Lin, Kun Lin

AU - Wu, Chien Ting

AU - Kuo, Mei Ling

AU - Yang, Chi Hui

AU - Wu, Wen Fa

AU - Ho, Chiahua

AU - Hu, Chenming

AU - Yang, Fu Liang

PY - 2013

Y1 - 2013

N2 - This is the first report of 0 eV or negative Schottky barrier height for electrons down to 100 K, even on lightly doped Si. It is achieved by energy barrier engineering with Yb doping at NiSi/Si interface. Ideal unity rectification ratio and reasonable sheet resistance are also achieved in this study. This technology can potentially boost future MOSFET performance.

AB - This is the first report of 0 eV or negative Schottky barrier height for electrons down to 100 K, even on lightly doped Si. It is achieved by energy barrier engineering with Yb doping at NiSi/Si interface. Ideal unity rectification ratio and reasonable sheet resistance are also achieved in this study. This technology can potentially boost future MOSFET performance.

UR - https://www.scopus.com/pages/publications/84881126298

UR - https://www.scopus.com/pages/publications/84881126298#tab=citedBy

U2 - 10.1109/VLSI-TSA.2013.6545608

DO - 10.1109/VLSI-TSA.2013.6545608

M3 - Conference contribution

AN - SCOPUS:84881126298

SN - 9781467330817

T3 - 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

BT - 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

T2 - 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

Y2 - 22 April 2013 through 24 April 2013

ER -

Chen SH, Chen MC, Chen HM, Shih CF, Wu SH, Ho YY et al. Schottky barrier free NiSi/Si junction technology by Yb-implantation for 1xnm CMOS applications. In 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013. 2013. 6545608. (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013). doi: 10.1109/VLSI-TSA.2013.6545608

Schottky barrier free NiSi/Si junction technology by Yb-implantation for 1xnm CMOS applications

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