Schottky barrier height and interfacial state density on oxide-GaAs interface

J. S. Hwang, C. C. Chang, M. F. Chen, C. C. Chen, K. I. Lin, F. C. Tang, M. Hong, J. Kwo

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Abstract

The interfacial characteristics of a series of oxide films on GaAs were investigated using photoreflectance (PR) and Raman spectra. The barrier heights across the interfaces and the densities of interfacial states were determined from the PR intensity as a function of the pump power density. Raman spectra were used to characterize the structural properties of the oxide films.

Original languageEnglish
Pages (from-to)348-353
Number of pages6
JournalJournal of Applied Physics
Volume94
Issue number1
DOIs
Publication statusPublished - 2003 Jul 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Hwang, J. S., Chang, C. C., Chen, M. F., Chen, C. C., Lin, K. I., Tang, F. C., Hong, M., & Kwo, J. (2003). Schottky barrier height and interfacial state density on oxide-GaAs interface. Journal of Applied Physics, 94(1), 348-353. https://doi.org/10.1063/1.1578528