Schottky barrier height and surface state density of Ni/Au contacts to (NH4)2Sx-treated n-type GaN

Ching Ting Lee, Yow Jon Lin, Day Shan Liu

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Abstract

By using capacitance-voltage and photoluminescence measurements, we have investigated the Schottky barrier height and surface state density of Ni/Au contacts to n-type GaN with, and without, (NH4)2Sx treatment. The Schottky barrier height of 1.099 eV is very close to the Schottky limit of 1.10 eV for Au/Ni/n-type GaN treated with (NH4)2Sx. This result indicates that there is no severe Fermi level pinning induced by surface states. The reduction of the surface state density for the (NH4)2Sx-treated n-type GaN is attributed to the decrease of dangling bonds and occupation of nitrogen-related vacancies due to the formation of Ga-S bonds.

Original languageEnglish
Pages (from-to)2573-2575
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number16
DOIs
Publication statusPublished - 2001 Oct 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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