Abstract
By using capacitance-voltage and photoluminescence measurements, we have investigated the Schottky barrier height and surface state density of Ni/Au contacts to n-type GaN with, and without, (NH4)2Sx treatment. The Schottky barrier height of 1.099 eV is very close to the Schottky limit of 1.10 eV for Au/Ni/n-type GaN treated with (NH4)2Sx. This result indicates that there is no severe Fermi level pinning induced by surface states. The reduction of the surface state density for the (NH4)2Sx-treated n-type GaN is attributed to the decrease of dangling bonds and occupation of nitrogen-related vacancies due to the formation of Ga-S bonds.
| Original language | English |
|---|---|
| Pages (from-to) | 2573-2575 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 79 |
| Issue number | 16 |
| DOIs | |
| Publication status | Published - 2001 Oct 15 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Lee, C. T., Lin, Y. J., & Liu, D. S. (2001). Schottky barrier height and surface state density of Ni/Au contacts to (NH4)2Sx-treated n-type GaN. Applied Physics Letters, 79(16), 2573-2575. https://doi.org/10.1063/1.1410358