Schottky barrier height and surface state density of Ni/Au contacts to (NH4)2Sx-treated n-type GaN

Ching Ting Lee; Yow Jon Lin; Day Shan Liu

doi:10.1063/1.1410358

Schottky barrier height and surface state density of Ni/Au contacts to (NH₄)₂S_x-treated n-type GaN

Ching Ting Lee, Yow Jon Lin, Day Shan Liu

Department of Photonics

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57 Citations (Scopus)

Abstract

By using capacitance-voltage and photoluminescence measurements, we have investigated the Schottky barrier height and surface state density of Ni/Au contacts to n-type GaN with, and without, (NH₄)₂S_x treatment. The Schottky barrier height of 1.099 eV is very close to the Schottky limit of 1.10 eV for Au/Ni/n-type GaN treated with (NH₄)₂S_x. This result indicates that there is no severe Fermi level pinning induced by surface states. The reduction of the surface state density for the (NH₄)₂S_x-treated n-type GaN is attributed to the decrease of dangling bonds and occupation of nitrogen-related vacancies due to the formation of Ga-S bonds.

Original language	English
Pages (from-to)	2573-2575
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	16
DOIs	https://doi.org/10.1063/1.1410358
Publication status	Published - 2001 Oct 15

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1410358

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abstract = "By using capacitance-voltage and photoluminescence measurements, we have investigated the Schottky barrier height and surface state density of Ni/Au contacts to n-type GaN with, and without, (NH4)2Sx treatment. The Schottky barrier height of 1.099 eV is very close to the Schottky limit of 1.10 eV for Au/Ni/n-type GaN treated with (NH4)2Sx. This result indicates that there is no severe Fermi level pinning induced by surface states. The reduction of the surface state density for the (NH4)2Sx-treated n-type GaN is attributed to the decrease of dangling bonds and occupation of nitrogen-related vacancies due to the formation of Ga-S bonds.",

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T1 - Schottky barrier height and surface state density of Ni/Au contacts to (NH4)2Sx-treated n-type GaN

AU - Lee, Ching Ting

AU - Lin, Yow Jon

AU - Liu, Day Shan

PY - 2001/10/15

Y1 - 2001/10/15

N2 - By using capacitance-voltage and photoluminescence measurements, we have investigated the Schottky barrier height and surface state density of Ni/Au contacts to n-type GaN with, and without, (NH4)2Sx treatment. The Schottky barrier height of 1.099 eV is very close to the Schottky limit of 1.10 eV for Au/Ni/n-type GaN treated with (NH4)2Sx. This result indicates that there is no severe Fermi level pinning induced by surface states. The reduction of the surface state density for the (NH4)2Sx-treated n-type GaN is attributed to the decrease of dangling bonds and occupation of nitrogen-related vacancies due to the formation of Ga-S bonds.

AB - By using capacitance-voltage and photoluminescence measurements, we have investigated the Schottky barrier height and surface state density of Ni/Au contacts to n-type GaN with, and without, (NH4)2Sx treatment. The Schottky barrier height of 1.099 eV is very close to the Schottky limit of 1.10 eV for Au/Ni/n-type GaN treated with (NH4)2Sx. This result indicates that there is no severe Fermi level pinning induced by surface states. The reduction of the surface state density for the (NH4)2Sx-treated n-type GaN is attributed to the decrease of dangling bonds and occupation of nitrogen-related vacancies due to the formation of Ga-S bonds.

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Schottky barrier height and surface state density of Ni/Au contacts to (NH₄)₂S_x-treated n-type GaN

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