Schottky behavior at InN-GaN interface

N. C. Chen, P. H. Chang, Y. N. Wang, H. C. Peng, W. C. Lien, C. F. Shih, Chin An Chang, G. M. Wu

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)


In this work, GaN Schottky diodes were fabricated by depositing InN on GaN surfaces. The junction between these two materials exhibits strong rectifying behavior. The barrier heights were determined to be 1.25 eV, 1.06 eV, and 1.41 eV by current-voltage, current-voltage-temperature, and capacitance-voltage methods, respectively. These values exceed those of any other metalGaN Schottky barriers. Therefore, the conduction-band offset between InN and GaN should not be smaller than the barrier heights obtained here.

Original languageEnglish
Article number212111
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number21
Publication statusPublished - 2005

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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