Schottky mechanism for Ni/Au contact with chlorine-treated n-type GaN layer

To investigate the function of chlorination treatment, Schottky diodes with NiAu contact and chlorine-treated n -type GaN were fabricated. The resultant Schottky barrier height and ideality factor of the chlorine-treated Schottky diodes were improved. The corresponding increase in photoluminescence intensity and carrier lifetime of the chlorine-treated n -type GaN was achieved using photoluminescence and time-resolved photoluminescence measurements. The improved performance of chlorine-treated Schottky diodes was attributed to the reduction of surface states as a result of reduced Ga dangling bonds and the N vacancies being passivated by the formation of Ga Ox on the surface of n -type GaN.