Schottky mechanism for Ni/Au contact with chlorine-treated n-type GaN layer

Po Sung Chen, Tsung Hsin Lee, Li Wen Lai, Ching Ting Lee

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22 Citations (Scopus)

Abstract

To investigate the function of chlorination treatment, Schottky diodes with NiAu contact and chlorine-treated n -type GaN were fabricated. The resultant Schottky barrier height and ideality factor of the chlorine-treated Schottky diodes were improved. The corresponding increase in photoluminescence intensity and carrier lifetime of the chlorine-treated n -type GaN was achieved using photoluminescence and time-resolved photoluminescence measurements. The improved performance of chlorine-treated Schottky diodes was attributed to the reduction of surface states as a result of reduced Ga dangling bonds and the N vacancies being passivated by the formation of Ga Ox on the surface of n -type GaN.

Original languageEnglish
Article number024507
JournalJournal of Applied Physics
Volume101
Issue number2
DOIs
Publication statusPublished - 2007 Mar 13

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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