A Schottky/two-dimensional hole gas (2DHG) barrier diode based on boron δ-doped silicon grown by molecular beam epitaxy has been fabricated for the first time. The advantages of the coupled δ-doped well structure over the single δ-doped well structure have been investigated both theoretically and experimentally. Preliminary measurements on the single and coupled δ-doped well devices including the current-voltage (I-V) and capacitance-voltage (C-V) characteristics are reported. Reverse breakdown voltages of over 50 V and 35 V were obtained for the single and coupled δ-doped devices, respectively. The coupled δ-doped layer diode exhibits a lower series resistance and a larger C-V nonlinearity as compared to those of the single δ-doped device, which is favorable for higher RC cutoff frequency Schottky/2DHG barrier diode fabrication.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)