Schottky/Two-Dimensional Hole Gas Silicon Barrier Diodes with Single and Coupled Delta-Doped Wells

Shui Jinn Wang; San Wu Lein; Fang Yuh Yeh; Ching Yuan Cheng

doi:10.1143/JJAP.33.2429

Schottky/Two-Dimensional Hole Gas Silicon Barrier Diodes with Single and Coupled Delta-Doped Wells

Shui Jinn Wang, San Wu Lein, Fang Yuh Yeh, Ching Yuan Cheng

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

Abstract

A Schottky/two-dimensional hole gas (2DHG) barrier diode based on boron δ-doped silicon grown by molecular beam epitaxy has been fabricated for the first time. The advantages of the coupled δ-doped well structure over the single δ-doped well structure have been investigated both theoretically and experimentally. Preliminary measurements on the single and coupled δ-doped well devices including the current-voltage (I-V) and capacitance-voltage (C-V) characteristics are reported. Reverse breakdown voltages of over 50 V and 35 V were obtained for the single and coupled δ-doped devices, respectively. The coupled δ-doped layer diode exhibits a lower series resistance and a larger C-V nonlinearity as compared to those of the single δ-doped device, which is favorable for higher RC cutoff frequency Schottky/2DHG barrier diode fabrication.

Original language	English
Number of pages	1
Journal	Japanese Journal of Applied Physics
Volume	33
Issue number	4S
DOIs	https://doi.org/10.1143/JJAP.33.2429
Publication status	Published - 1994 Apr

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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@article{5806e116d3014e69bfc0313e33905308,

title = "Schottky/Two-Dimensional Hole Gas Silicon Barrier Diodes with Single and Coupled Delta-Doped Wells",

abstract = "A Schottky/two-dimensional hole gas (2DHG) barrier diode based on boron δ-doped silicon grown by molecular beam epitaxy has been fabricated for the first time. The advantages of the coupled δ-doped well structure over the single δ-doped well structure have been investigated both theoretically and experimentally. Preliminary measurements on the single and coupled δ-doped well devices including the current-voltage (I-V) and capacitance-voltage (C-V) characteristics are reported. Reverse breakdown voltages of over 50 V and 35 V were obtained for the single and coupled δ-doped devices, respectively. The coupled δ-doped layer diode exhibits a lower series resistance and a larger C-V nonlinearity as compared to those of the single δ-doped device, which is favorable for higher RC cutoff frequency Schottky/2DHG barrier diode fabrication.",

author = "{Jinn Wang}, Shui and {Wu Lein}, San and Yeh, {Fang Yuh} and Cheng, {Ching Yuan}",

year = "1994",

month = apr,

doi = "10.1143/JJAP.33.2429",

language = "English",

volume = "33",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

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T1 - Schottky/Two-Dimensional Hole Gas Silicon Barrier Diodes with Single and Coupled Delta-Doped Wells

AU - Jinn Wang, Shui

AU - Wu Lein, San

AU - Yeh, Fang Yuh

AU - Cheng, Ching Yuan

PY - 1994/4

Y1 - 1994/4

N2 - A Schottky/two-dimensional hole gas (2DHG) barrier diode based on boron δ-doped silicon grown by molecular beam epitaxy has been fabricated for the first time. The advantages of the coupled δ-doped well structure over the single δ-doped well structure have been investigated both theoretically and experimentally. Preliminary measurements on the single and coupled δ-doped well devices including the current-voltage (I-V) and capacitance-voltage (C-V) characteristics are reported. Reverse breakdown voltages of over 50 V and 35 V were obtained for the single and coupled δ-doped devices, respectively. The coupled δ-doped layer diode exhibits a lower series resistance and a larger C-V nonlinearity as compared to those of the single δ-doped device, which is favorable for higher RC cutoff frequency Schottky/2DHG barrier diode fabrication.

AB - A Schottky/two-dimensional hole gas (2DHG) barrier diode based on boron δ-doped silicon grown by molecular beam epitaxy has been fabricated for the first time. The advantages of the coupled δ-doped well structure over the single δ-doped well structure have been investigated both theoretically and experimentally. Preliminary measurements on the single and coupled δ-doped well devices including the current-voltage (I-V) and capacitance-voltage (C-V) characteristics are reported. Reverse breakdown voltages of over 50 V and 35 V were obtained for the single and coupled δ-doped devices, respectively. The coupled δ-doped layer diode exhibits a lower series resistance and a larger C-V nonlinearity as compared to those of the single δ-doped device, which is favorable for higher RC cutoff frequency Schottky/2DHG barrier diode fabrication.

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