Schottky/Two-Dimensional Hole Gas Silicon Barrier Diodes with Single and Coupled Delta-Doped Wells

Shui Jinn Wang, San Wu Lein, Fang Yuh Yeh, Ching Yuan Cheng

Research output: Contribution to journalArticlepeer-review

Abstract

A Schottky/two-dimensional hole gas (2DHG) barrier diode based on boron δ-doped silicon grown by molecular beam epitaxy has been fabricated for the first time. The advantages of the coupled δ-doped well structure over the single δ-doped well structure have been investigated both theoretically and experimentally. Preliminary measurements on the single and coupled δ-doped well devices including the current-voltage (I-V) and capacitance-voltage (C-V) characteristics are reported. Reverse breakdown voltages of over 50 V and 35 V were obtained for the single and coupled δ-doped devices, respectively. The coupled δ-doped layer diode exhibits a lower series resistance and a larger C-V nonlinearity as compared to those of the single δ-doped device, which is favorable for higher RC cutoff frequency Schottky/2DHG barrier diode fabrication.

Original languageEnglish
Number of pages1
JournalJapanese Journal of Applied Physics
Volume33
Issue number4S
DOIs
Publication statusPublished - 1994 Apr

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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