Schottky/two-dimensional hole gas silicon barrier diodes with single and coupled delta-doped wells

Shui Jinn Wang, San Lein Wu, Fang Yuh Yeh, Ching Yuan Cheng

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


A Schottky/two-dimensional hole gas (2DHG) barrier diode based on boron δ-doped silicon grown by molecular beam epitaxy has been fabricated for the first time. The advantages of the coupled δ-doped well structure over the single δ-doped well structure have been investigated both theoretically and experimentally. Preliminary measurements on the single and coupled δ-doped well devices including the current-voltage (I-V) and capacitance-voltage (C-V) characteristics are reported. Reverse breakdown voltages of over 50 V and 35 V were obtained for the single and coupled δ-doped devices, respectively. The coupled δ-doped layer diode exhibits a lower series resistance and a larger C-V nonlinearity as compared to those of the single δ-doped device, which is favorable for higher RC cutoff frequency Schottky/2DHG barrier diode fabrication.

Original languageEnglish
Pages (from-to)2429-2434
Number of pages6
JournalJapanese Journal of Applied Physics
Issue number4 B
Publication statusPublished - 1994 Apr
EventProceedings of the 15th Dry Process Symposium (DPS 1993) - Tokyo, Jpn
Duration: 1993 Nov 11993 Nov 2

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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