Abstract
A Schottky/two-dimensional hole gas (2DHG) barrier diode based on boron δ-doped silicon grown by molecular beam epitaxy has been fabricated for the first time. The advantages of the coupled δ-doped well structure over the single δ-doped well structure have been investigated both theoretically and experimentally. Preliminary measurements on the single and coupled δ-doped well devices including the current-voltage (I-V) and capacitance-voltage (C-V) characteristics are reported. Reverse breakdown voltages of over 50 V and 35 V were obtained for the single and coupled δ-doped devices, respectively. The coupled δ-doped layer diode exhibits a lower series resistance and a larger C-V nonlinearity as compared to those of the single δ-doped device, which is favorable for higher RC cutoff frequency Schottky/2DHG barrier diode fabrication.
| Original language | English |
|---|---|
| Pages (from-to) | 2429-2434 |
| Number of pages | 6 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 33 |
| Issue number | 4 B |
| Publication status | Published - 1994 Apr |
| Event | Proceedings of the 15th Dry Process Symposium (DPS 1993) - Tokyo, Jpn Duration: 1993 Nov 1 → 1993 Nov 2 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)