Schottky/two-dimensional hole gas silicon barrier diodes with single and coupled delta-doped wells

Shui Jinn Wang; San Lein Wu; Fang Yuh Yeh; Ching Yuan Cheng

Schottky/two-dimensional hole gas silicon barrier diodes with single and coupled delta-doped wells

Shui Jinn Wang, San Lein Wu, Fang Yuh Yeh, Ching Yuan Cheng

Institute of Microelectronics

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

A Schottky/two-dimensional hole gas (2DHG) barrier diode based on boron δ-doped silicon grown by molecular beam epitaxy has been fabricated for the first time. The advantages of the coupled δ-doped well structure over the single δ-doped well structure have been investigated both theoretically and experimentally. Preliminary measurements on the single and coupled δ-doped well devices including the current-voltage (I-V) and capacitance-voltage (C-V) characteristics are reported. Reverse breakdown voltages of over 50 V and 35 V were obtained for the single and coupled δ-doped devices, respectively. The coupled δ-doped layer diode exhibits a lower series resistance and a larger C-V nonlinearity as compared to those of the single δ-doped device, which is favorable for higher RC cutoff frequency Schottky/2DHG barrier diode fabrication.

Original language	English
Pages (from-to)	2429-2434
Number of pages	6
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	33
Issue number	4 B
Publication status	Published - 1994 Apr
Event	Proceedings of the 15th Dry Process Symposium (DPS 1993) - Tokyo, Jpn Duration: 1993 Nov 1 → 1993 Nov 2

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Schottky/two-dimensional hole gas silicon barrier diodes with single and coupled delta-doped wells",

abstract = "A Schottky/two-dimensional hole gas (2DHG) barrier diode based on boron δ-doped silicon grown by molecular beam epitaxy has been fabricated for the first time. The advantages of the coupled δ-doped well structure over the single δ-doped well structure have been investigated both theoretically and experimentally. Preliminary measurements on the single and coupled δ-doped well devices including the current-voltage (I-V) and capacitance-voltage (C-V) characteristics are reported. Reverse breakdown voltages of over 50 V and 35 V were obtained for the single and coupled δ-doped devices, respectively. The coupled δ-doped layer diode exhibits a lower series resistance and a larger C-V nonlinearity as compared to those of the single δ-doped device, which is favorable for higher RC cutoff frequency Schottky/2DHG barrier diode fabrication.",

author = "Wang, {Shui Jinn} and Wu, {San Lein} and Yeh, {Fang Yuh} and Cheng, {Ching Yuan}",

year = "1994",

month = apr,

language = "English",

volume = "33",

pages = "2429--2434",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 B",

}

Schottky/two-dimensional hole gas silicon barrier diodes with single and coupled delta-doped wells. / Wang, Shui Jinn; Wu, San Lein; Yeh, Fang Yuh; Cheng, Ching Yuan.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 33, No. 4 B, 04.1994, p. 2429-2434.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Schottky/two-dimensional hole gas silicon barrier diodes with single and coupled delta-doped wells

AU - Wang, Shui Jinn

AU - Wu, San Lein

AU - Yeh, Fang Yuh

AU - Cheng, Ching Yuan

PY - 1994/4

Y1 - 1994/4

N2 - A Schottky/two-dimensional hole gas (2DHG) barrier diode based on boron δ-doped silicon grown by molecular beam epitaxy has been fabricated for the first time. The advantages of the coupled δ-doped well structure over the single δ-doped well structure have been investigated both theoretically and experimentally. Preliminary measurements on the single and coupled δ-doped well devices including the current-voltage (I-V) and capacitance-voltage (C-V) characteristics are reported. Reverse breakdown voltages of over 50 V and 35 V were obtained for the single and coupled δ-doped devices, respectively. The coupled δ-doped layer diode exhibits a lower series resistance and a larger C-V nonlinearity as compared to those of the single δ-doped device, which is favorable for higher RC cutoff frequency Schottky/2DHG barrier diode fabrication.

AB - A Schottky/two-dimensional hole gas (2DHG) barrier diode based on boron δ-doped silicon grown by molecular beam epitaxy has been fabricated for the first time. The advantages of the coupled δ-doped well structure over the single δ-doped well structure have been investigated both theoretically and experimentally. Preliminary measurements on the single and coupled δ-doped well devices including the current-voltage (I-V) and capacitance-voltage (C-V) characteristics are reported. Reverse breakdown voltages of over 50 V and 35 V were obtained for the single and coupled δ-doped devices, respectively. The coupled δ-doped layer diode exhibits a lower series resistance and a larger C-V nonlinearity as compared to those of the single δ-doped device, which is favorable for higher RC cutoff frequency Schottky/2DHG barrier diode fabrication.

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

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T2 - Proceedings of the 15th Dry Process Symposium (DPS 1993)

Y2 - 1 November 1993 through 2 November 1993

ER -