Schottky/two-dimensional hole gas silicon barrier diodes with single and coupled delta-doped wells

Shui Jinn Wang; San Lein Wu; Fang Yuh Yeh; Ching Yuan Cheng

Schottky/two-dimensional hole gas silicon barrier diodes with single and coupled delta-doped wells

Shui Jinn Wang, San Lein Wu, Fang Yuh Yeh, Ching Yuan Cheng

Institute of Microelectronics

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

A Schottky/two-dimensional hole gas (2DHG) barrier diode based on boron δ-doped silicon grown by molecular beam epitaxy has been fabricated for the first time. The advantages of the coupled δ-doped well structure over the single δ-doped well structure have been investigated both theoretically and experimentally. Preliminary measurements on the single and coupled δ-doped well devices including the current-voltage (I-V) and capacitance-voltage (C-V) characteristics are reported. Reverse breakdown voltages of over 50 V and 35 V were obtained for the single and coupled δ-doped devices, respectively. The coupled δ-doped layer diode exhibits a lower series resistance and a larger C-V nonlinearity as compared to those of the single δ-doped device, which is favorable for higher RC cutoff frequency Schottky/2DHG barrier diode fabrication.

Original language	English
Pages (from-to)	2429-2434
Number of pages	6
Journal	Japanese Journal of Applied Physics
Volume	33
Issue number	4 B
Publication status	Published - 1994 Apr
Event	Proceedings of the 15th Dry Process Symposium (DPS 1993) - Tokyo, Jpn Duration: 1993 Nov 1 → 1993 Nov 2

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

Cite this

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title = "Schottky/two-dimensional hole gas silicon barrier diodes with single and coupled delta-doped wells",

abstract = "A Schottky/two-dimensional hole gas (2DHG) barrier diode based on boron δ-doped silicon grown by molecular beam epitaxy has been fabricated for the first time. The advantages of the coupled δ-doped well structure over the single δ-doped well structure have been investigated both theoretically and experimentally. Preliminary measurements on the single and coupled δ-doped well devices including the current-voltage (I-V) and capacitance-voltage (C-V) characteristics are reported. Reverse breakdown voltages of over 50 V and 35 V were obtained for the single and coupled δ-doped devices, respectively. The coupled δ-doped layer diode exhibits a lower series resistance and a larger C-V nonlinearity as compared to those of the single δ-doped device, which is favorable for higher RC cutoff frequency Schottky/2DHG barrier diode fabrication.",

author = "Wang, \{Shui Jinn\} and Wu, \{San Lein\} and Yeh, \{Fang Yuh\} and Cheng, \{Ching Yuan\}",

year = "1994",

month = apr,

language = "English",

volume = "33",

pages = "2429--2434",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "4 B",

note = "Proceedings of the 15th Dry Process Symposium (DPS 1993) ; Conference date: 01-11-1993 Through 02-11-1993",

}

TY - JOUR

T1 - Schottky/two-dimensional hole gas silicon barrier diodes with single and coupled delta-doped wells

AU - Wang, Shui Jinn

AU - Wu, San Lein

AU - Yeh, Fang Yuh

AU - Cheng, Ching Yuan

PY - 1994/4

Y1 - 1994/4

N2 - A Schottky/two-dimensional hole gas (2DHG) barrier diode based on boron δ-doped silicon grown by molecular beam epitaxy has been fabricated for the first time. The advantages of the coupled δ-doped well structure over the single δ-doped well structure have been investigated both theoretically and experimentally. Preliminary measurements on the single and coupled δ-doped well devices including the current-voltage (I-V) and capacitance-voltage (C-V) characteristics are reported. Reverse breakdown voltages of over 50 V and 35 V were obtained for the single and coupled δ-doped devices, respectively. The coupled δ-doped layer diode exhibits a lower series resistance and a larger C-V nonlinearity as compared to those of the single δ-doped device, which is favorable for higher RC cutoff frequency Schottky/2DHG barrier diode fabrication.

AB - A Schottky/two-dimensional hole gas (2DHG) barrier diode based on boron δ-doped silicon grown by molecular beam epitaxy has been fabricated for the first time. The advantages of the coupled δ-doped well structure over the single δ-doped well structure have been investigated both theoretically and experimentally. Preliminary measurements on the single and coupled δ-doped well devices including the current-voltage (I-V) and capacitance-voltage (C-V) characteristics are reported. Reverse breakdown voltages of over 50 V and 35 V were obtained for the single and coupled δ-doped devices, respectively. The coupled δ-doped layer diode exhibits a lower series resistance and a larger C-V nonlinearity as compared to those of the single δ-doped device, which is favorable for higher RC cutoff frequency Schottky/2DHG barrier diode fabrication.

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UR - https://www.scopus.com/inward/citedby.url?scp=0028405399&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0028405399

SN - 0021-4922

VL - 33

SP - 2429

EP - 2434

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 4 B

T2 - Proceedings of the 15th Dry Process Symposium (DPS 1993)

Y2 - 1 November 1993 through 2 November 1993

ER -

Schottky/two-dimensional hole gas silicon barrier diodes with single and coupled delta-doped wells

Abstract

All Science Journal Classification (ASJC) codes

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