Secondary-ion mass spectrometry analysis in pseudomorphic GaAs/InGaAs/GaAs heterostructures utilizing a δ-doping superlattice

C. L. Wu; W. C. Hsu; H. M. Shieh

doi:10.1063/1.355847

Secondary-ion mass spectrometry analysis in pseudomorphic GaAs/InGaAs/GaAs heterostructures utilizing a δ-doping superlattice

C. L. Wu
, W. C. Hsu
, H. M. Shieh

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Significant improvement on two-dimensional electron gas (2DEG) concentration and mobility in a δ-doping superlattice GaAs/In _0.25Ga_0.75As/GaAs pseudomorphic heterostructures prepared by low-pressure metalorganic chemical vapor deposition have been demonstrated and discussed. The secondary-ion mass spectrometry profiles of these δ-doping superlattice structures were studied. The triple and double δ-doping superlattice heterostructures showed extremely high 2DEG concentrations of 8.8 (6.0) and 4.3 (2.5)×10¹² cm^-2 along with enhanced mobilities of 2710 (6500) and 3916 (18400) cm²/V s at 300 (77) K, respectively. The 2DEG concentrations, to our knowledge, are among the highest for previously reported pseudomorphic heterostructures with similar mobilities.

Original language	English
Pages (from-to)	608-610
Number of pages	3
Journal	Journal of Applied Physics
Volume	75
Issue number	1
DOIs	https://doi.org/10.1063/1.355847
Publication status	Published - 1994

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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title = "Secondary-ion mass spectrometry analysis in pseudomorphic GaAs/InGaAs/GaAs heterostructures utilizing a δ-doping superlattice",

abstract = "Significant improvement on two-dimensional electron gas (2DEG) concentration and mobility in a δ-doping superlattice GaAs/In 0.25Ga0.75As/GaAs pseudomorphic heterostructures prepared by low-pressure metalorganic chemical vapor deposition have been demonstrated and discussed. The secondary-ion mass spectrometry profiles of these δ-doping superlattice structures were studied. The triple and double δ-doping superlattice heterostructures showed extremely high 2DEG concentrations of 8.8 (6.0) and 4.3 (2.5)×1012 cm-2 along with enhanced mobilities of 2710 (6500) and 3916 (18400) cm2/V s at 300 (77) K, respectively. The 2DEG concentrations, to our knowledge, are among the highest for previously reported pseudomorphic heterostructures with similar mobilities.",

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AU - Wu, C. L.

AU - Hsu, W. C.

AU - Shieh, H. M.

PY - 1994

Y1 - 1994

N2 - Significant improvement on two-dimensional electron gas (2DEG) concentration and mobility in a δ-doping superlattice GaAs/In 0.25Ga0.75As/GaAs pseudomorphic heterostructures prepared by low-pressure metalorganic chemical vapor deposition have been demonstrated and discussed. The secondary-ion mass spectrometry profiles of these δ-doping superlattice structures were studied. The triple and double δ-doping superlattice heterostructures showed extremely high 2DEG concentrations of 8.8 (6.0) and 4.3 (2.5)×1012 cm-2 along with enhanced mobilities of 2710 (6500) and 3916 (18400) cm2/V s at 300 (77) K, respectively. The 2DEG concentrations, to our knowledge, are among the highest for previously reported pseudomorphic heterostructures with similar mobilities.

AB - Significant improvement on two-dimensional electron gas (2DEG) concentration and mobility in a δ-doping superlattice GaAs/In 0.25Ga0.75As/GaAs pseudomorphic heterostructures prepared by low-pressure metalorganic chemical vapor deposition have been demonstrated and discussed. The secondary-ion mass spectrometry profiles of these δ-doping superlattice structures were studied. The triple and double δ-doping superlattice heterostructures showed extremely high 2DEG concentrations of 8.8 (6.0) and 4.3 (2.5)×1012 cm-2 along with enhanced mobilities of 2710 (6500) and 3916 (18400) cm2/V s at 300 (77) K, respectively. The 2DEG concentrations, to our knowledge, are among the highest for previously reported pseudomorphic heterostructures with similar mobilities.

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Secondary-ion mass spectrometry analysis in pseudomorphic GaAs/InGaAs/GaAs heterostructures utilizing a δ-doping superlattice

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