TY - JOUR
T1 - Selective-area growth of single-crystal wurtzite GaN nanorods on SiOx/Si(001) substrates by reactive magnetron sputter epitaxy exhibiting single-mode lasing
AU - Serban, Elena Alexandra
AU - Palisaitis, Justinas
AU - Yeh, Chia Cheng
AU - Hsu, Hsu Cheng
AU - Tsai, Yu Lin
AU - Kuo, Hao Chung
AU - Junaid, Muhammad
AU - Hultman, Lars
AU - Persson, Per Ola Åke
AU - Birch, Jens
AU - Hsiao, Ching Lien
N1 - Funding Information:
This work was supported by the Swedish Research Council (VR) under grants Nos 621-2012-4420 and 621-2013-5360, and the Swedish Governmental Agency for Innovation Systems (VINNOVA) under the VINNMER international qualification program. The Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University (Faculty Grant SFO-Mat-LiU 2009-00971) is acknowledged for financial support. The authors also acknowledge Swedish Foundation for Strategic Research (SSF) through the Research Infrastructure Fellow program no. RIF 14-0074. Authors would like to thank the Knut and Alice Wallenberg Foundation for support of the Electron Microscopy laboratory at Linköping University. Additionally, the authors would like to thank for the support from Myfab National Access program (at MC2 NanoFabrication Laboratory, Chalmers University of Technology). http://www.myfab.se/Myfab/MyfabNationalAccess.aspx C.-C. Y. and H.-C.H. acknowledge the support from Ministry of Science and Technology (MOST) of Taiwan under grant MOST 105-2112-M-006-004-MY3.
Publisher Copyright:
© 2017 The Author(s).
PY - 2017/12/1
Y1 - 2017/12/1
N2 - Selective-area growth (SAG) of single-crystal wurtzite GaN nanorods (NRs) directly onto Si(001) substrates with un-etched native SiOx amorphous layer, assisted by a patterning TiNx mask fabricated by nanosphere lithography (NSL), has been realized by reactive magnetron sputter epitaxy (MSE). The GaN NRs were grown vertically to the substrate surface with the growth direction along c-axis in the well-defined nano-opening areas. A 5-step structural and morphological evolution of the SAG NRs observed at different sputtering times depicts a comprehensive growth model, listed in sequence as: Formation of a polycrystalline wetting layer, predominating c-axis oriented nucleation, coarsening and coalescence of multi-islands, single NR evolution, and finally quasi-equilibrium crystal shape formation. Room-temperature cathodoluminescence spectroscopy shows a strong GaN bandedge emission with a uniform luminescence across the NRs, indicating that the SAG NRs are grown with high quality and purity. In addition, single-longitudinal-mode lasing, attributed to well-faceted NR geometry forming a Fabry-Pérot cavity, was achieved by optical pumping, paving a way for fabricating high-performance laser optoelectronics using MSE.
AB - Selective-area growth (SAG) of single-crystal wurtzite GaN nanorods (NRs) directly onto Si(001) substrates with un-etched native SiOx amorphous layer, assisted by a patterning TiNx mask fabricated by nanosphere lithography (NSL), has been realized by reactive magnetron sputter epitaxy (MSE). The GaN NRs were grown vertically to the substrate surface with the growth direction along c-axis in the well-defined nano-opening areas. A 5-step structural and morphological evolution of the SAG NRs observed at different sputtering times depicts a comprehensive growth model, listed in sequence as: Formation of a polycrystalline wetting layer, predominating c-axis oriented nucleation, coarsening and coalescence of multi-islands, single NR evolution, and finally quasi-equilibrium crystal shape formation. Room-temperature cathodoluminescence spectroscopy shows a strong GaN bandedge emission with a uniform luminescence across the NRs, indicating that the SAG NRs are grown with high quality and purity. In addition, single-longitudinal-mode lasing, attributed to well-faceted NR geometry forming a Fabry-Pérot cavity, was achieved by optical pumping, paving a way for fabricating high-performance laser optoelectronics using MSE.
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U2 - 10.1038/s41598-017-12702-y
DO - 10.1038/s41598-017-12702-y
M3 - Article
C2 - 28983102
AN - SCOPUS:85029347653
VL - 7
JO - Scientific Reports
JF - Scientific Reports
SN - 2045-2322
IS - 1
M1 - 12701
ER -