Selective epitaxial silicon growth in high aspect ratio contact on 70 nm node flash memory

Ching Yuan Ho; Jr Hau He; Yuan Pul Chang; Chenhsin Lien

doi:10.1016/j.tsf.2009.05.048

Selective epitaxial silicon growth in high aspect ratio contact on 70 nm node flash memory

Ching Yuan Ho, Jr Hau He, Yuan Pul Chang, Chenhsin Lien

Department of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Selective epitaxial growth (SEG) silicon as sacrificial layer is proposed to circumvent junction leakage (I_jun) of bit line contact due to silicon substrate loss by high aspect ratio contact etching and spontaneous salicide formation. The result indicates that the appropriate SEG silicon in contact area significantly reduces I_jun about three orders compared with no SEG silicon. In addition, the SEG method provides acceptable Kelvin contact resistance. Furthermore, during salicide formation, the consumed ratio of titanium to silicon is 0.7. It is confirmed that the feasible approach not only prevents from I_jun deterioration but also adjusts contact resistance as well.

Original language	English
Pages (from-to)	6850-6852
Number of pages	3
Journal	Thin Solid Films
Volume	517
Issue number	24
DOIs	https://doi.org/10.1016/j.tsf.2009.05.048
Publication status	Published - 2009 Oct 30

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2009.05.048

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title = "Selective epitaxial silicon growth in high aspect ratio contact on 70 nm node flash memory",

abstract = "Selective epitaxial growth (SEG) silicon as sacrificial layer is proposed to circumvent junction leakage (Ijun) of bit line contact due to silicon substrate loss by high aspect ratio contact etching and spontaneous salicide formation. The result indicates that the appropriate SEG silicon in contact area significantly reduces Ijun about three orders compared with no SEG silicon. In addition, the SEG method provides acceptable Kelvin contact resistance. Furthermore, during salicide formation, the consumed ratio of titanium to silicon is 0.7. It is confirmed that the feasible approach not only prevents from Ijun deterioration but also adjusts contact resistance as well.",

author = "Ho, {Ching Yuan} and He, {Jr Hau} and Chang, {Yuan Pul} and Chenhsin Lien",

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T1 - Selective epitaxial silicon growth in high aspect ratio contact on 70 nm node flash memory

AU - Ho, Ching Yuan

AU - He, Jr Hau

AU - Chang, Yuan Pul

AU - Lien, Chenhsin

PY - 2009/10/30

Y1 - 2009/10/30

N2 - Selective epitaxial growth (SEG) silicon as sacrificial layer is proposed to circumvent junction leakage (Ijun) of bit line contact due to silicon substrate loss by high aspect ratio contact etching and spontaneous salicide formation. The result indicates that the appropriate SEG silicon in contact area significantly reduces Ijun about three orders compared with no SEG silicon. In addition, the SEG method provides acceptable Kelvin contact resistance. Furthermore, during salicide formation, the consumed ratio of titanium to silicon is 0.7. It is confirmed that the feasible approach not only prevents from Ijun deterioration but also adjusts contact resistance as well.

AB - Selective epitaxial growth (SEG) silicon as sacrificial layer is proposed to circumvent junction leakage (Ijun) of bit line contact due to silicon substrate loss by high aspect ratio contact etching and spontaneous salicide formation. The result indicates that the appropriate SEG silicon in contact area significantly reduces Ijun about three orders compared with no SEG silicon. In addition, the SEG method provides acceptable Kelvin contact resistance. Furthermore, during salicide formation, the consumed ratio of titanium to silicon is 0.7. It is confirmed that the feasible approach not only prevents from Ijun deterioration but also adjusts contact resistance as well.

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M3 - Article

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SP - 6850

EP - 6852

JO - Thin Solid Films

JF - Thin Solid Films

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ER -

Selective epitaxial silicon growth in high aspect ratio contact on 70 nm node flash memory

Abstract

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