Selective Etching of SiGe on SiGe/Si Heterostructures

G. K. Chang; T. K. Carns; S. S. Rhee; K. L. Wang

doi:10.1149/1.2085539

Selective Etching of SiGe on SiGe/Si Heterostructures

G. K. Chang
, T. K. Carns
, S. S. Rhee
, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

The chemical etchant composed of hydrofluoric acid, hydrogen peroxide, and acetic acid (HF:H₂O₂:CH₃COOH) is studied as a selective etchant of SiGe over Si. It is found that the solution has a very high selectivity of etching SiGe over Si. Etch rates for various Ge_xSi_{1_x} samples with differing mole fractions of Ge (0.15 ≤ × ≤ 0.40) are discussed as well as the stopping behavior of the solution on Si. Also discussed is the application of the solution to heterostructure devices, particularly the three terminal resonant tunneling transistor.

Original language	English
Pages (from-to)	202-204
Number of pages	3
Journal	Journal of the Electrochemical Society
Volume	138
Issue number	1
DOIs	https://doi.org/10.1149/1.2085539
Publication status	Published - 1991

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Surfaces, Coatings and Films
Electrochemistry
Renewable Energy, Sustainability and the Environment

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/1.2085539

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abstract = "The chemical etchant composed of hydrofluoric acid, hydrogen peroxide, and acetic acid (HF:H2O2:CH3COOH) is studied as a selective etchant of SiGe over Si. It is found that the solution has a very high selectivity of etching SiGe over Si. Etch rates for various GexSi1\_x samples with differing mole fractions of Ge (0.15 ≤ × ≤ 0.40) are discussed as well as the stopping behavior of the solution on Si. Also discussed is the application of the solution to heterostructure devices, particularly the three terminal resonant tunneling transistor.",

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T1 - Selective Etching of SiGe on SiGe/Si Heterostructures

AU - Chang, G. K.

AU - Carns, T. K.

AU - Rhee, S. S.

AU - Wang, K. L.

PY - 1991

Y1 - 1991

N2 - The chemical etchant composed of hydrofluoric acid, hydrogen peroxide, and acetic acid (HF:H2O2:CH3COOH) is studied as a selective etchant of SiGe over Si. It is found that the solution has a very high selectivity of etching SiGe over Si. Etch rates for various GexSi1_x samples with differing mole fractions of Ge (0.15 ≤ × ≤ 0.40) are discussed as well as the stopping behavior of the solution on Si. Also discussed is the application of the solution to heterostructure devices, particularly the three terminal resonant tunneling transistor.

AB - The chemical etchant composed of hydrofluoric acid, hydrogen peroxide, and acetic acid (HF:H2O2:CH3COOH) is studied as a selective etchant of SiGe over Si. It is found that the solution has a very high selectivity of etching SiGe over Si. Etch rates for various GexSi1_x samples with differing mole fractions of Ge (0.15 ≤ × ≤ 0.40) are discussed as well as the stopping behavior of the solution on Si. Also discussed is the application of the solution to heterostructure devices, particularly the three terminal resonant tunneling transistor.

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JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 1

ER -

Selective Etching of SiGe on SiGe/Si Heterostructures

Abstract

All Science Journal Classification (ASJC) codes

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