Selective Growth of AlGaN-Based p-i-n UV Photodiodes Structures

Ming Lun Lee, Yu Hsiang Yeh, Kuo Hua Chang, Po Cheng Chen, Wei Chih Lai, Jinn Kong Sheu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Al0.25Ga0.75N ultraviolet (UV) p-i-n photodiodes (PDs) with top and inverted p-layer structure are created by selective-area growth on a GaN template layer. All PDs exhibit typical zero bias peak responsivity at 310 nm and the UV-to-visible (310/400 nm) spectral rejection ratio is greater than three orders of magnitude. In contrast to conventional AlGaN-based p-i-n photodiodes, the inverted devices with low-resistivity n-type AlGaN top-contact layers exhibit a nearly flat spectral response at the short wavelength regions (210-310 nm). The proposed device structure can achieve solar-blind, AlGaN/GaN-based p-i-n PDs with high-aluminum content and reduced tensile strain due to the lattice mismatch between AlGaN and GaN layers.

Original languageEnglish
Article number6824169
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume20
Issue number6
DOIs
Publication statusPublished - 2014 Nov 1

Fingerprint

Photodiodes
photodiodes
Lattice mismatch
Tensile strain
spectral sensitivity
rejection
templates
aluminum
Aluminum
Wavelength
electrical resistivity
wavelengths

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

@article{0ff250e5788946c5b754680d1e17b250,
title = "Selective Growth of AlGaN-Based p-i-n UV Photodiodes Structures",
abstract = "Al0.25Ga0.75N ultraviolet (UV) p-i-n photodiodes (PDs) with top and inverted p-layer structure are created by selective-area growth on a GaN template layer. All PDs exhibit typical zero bias peak responsivity at 310 nm and the UV-to-visible (310/400 nm) spectral rejection ratio is greater than three orders of magnitude. In contrast to conventional AlGaN-based p-i-n photodiodes, the inverted devices with low-resistivity n-type AlGaN top-contact layers exhibit a nearly flat spectral response at the short wavelength regions (210-310 nm). The proposed device structure can achieve solar-blind, AlGaN/GaN-based p-i-n PDs with high-aluminum content and reduced tensile strain due to the lattice mismatch between AlGaN and GaN layers.",
author = "Lee, {Ming Lun} and Yeh, {Yu Hsiang} and Chang, {Kuo Hua} and Chen, {Po Cheng} and Lai, {Wei Chih} and Sheu, {Jinn Kong}",
year = "2014",
month = "11",
day = "1",
doi = "10.1109/JSTQE.2014.2327795",
language = "English",
volume = "20",
journal = "IEEE Journal on Selected Topics in Quantum Electronics",
issn = "1077-260X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",

}

Selective Growth of AlGaN-Based p-i-n UV Photodiodes Structures. / Lee, Ming Lun; Yeh, Yu Hsiang; Chang, Kuo Hua; Chen, Po Cheng; Lai, Wei Chih; Sheu, Jinn Kong.

In: IEEE Journal on Selected Topics in Quantum Electronics, Vol. 20, No. 6, 6824169, 01.11.2014.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Selective Growth of AlGaN-Based p-i-n UV Photodiodes Structures

AU - Lee, Ming Lun

AU - Yeh, Yu Hsiang

AU - Chang, Kuo Hua

AU - Chen, Po Cheng

AU - Lai, Wei Chih

AU - Sheu, Jinn Kong

PY - 2014/11/1

Y1 - 2014/11/1

N2 - Al0.25Ga0.75N ultraviolet (UV) p-i-n photodiodes (PDs) with top and inverted p-layer structure are created by selective-area growth on a GaN template layer. All PDs exhibit typical zero bias peak responsivity at 310 nm and the UV-to-visible (310/400 nm) spectral rejection ratio is greater than three orders of magnitude. In contrast to conventional AlGaN-based p-i-n photodiodes, the inverted devices with low-resistivity n-type AlGaN top-contact layers exhibit a nearly flat spectral response at the short wavelength regions (210-310 nm). The proposed device structure can achieve solar-blind, AlGaN/GaN-based p-i-n PDs with high-aluminum content and reduced tensile strain due to the lattice mismatch between AlGaN and GaN layers.

AB - Al0.25Ga0.75N ultraviolet (UV) p-i-n photodiodes (PDs) with top and inverted p-layer structure are created by selective-area growth on a GaN template layer. All PDs exhibit typical zero bias peak responsivity at 310 nm and the UV-to-visible (310/400 nm) spectral rejection ratio is greater than three orders of magnitude. In contrast to conventional AlGaN-based p-i-n photodiodes, the inverted devices with low-resistivity n-type AlGaN top-contact layers exhibit a nearly flat spectral response at the short wavelength regions (210-310 nm). The proposed device structure can achieve solar-blind, AlGaN/GaN-based p-i-n PDs with high-aluminum content and reduced tensile strain due to the lattice mismatch between AlGaN and GaN layers.

UR - http://www.scopus.com/inward/record.url?scp=84957900410&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84957900410&partnerID=8YFLogxK

U2 - 10.1109/JSTQE.2014.2327795

DO - 10.1109/JSTQE.2014.2327795

M3 - Article

AN - SCOPUS:84957900410

VL - 20

JO - IEEE Journal on Selected Topics in Quantum Electronics

JF - IEEE Journal on Selected Topics in Quantum Electronics

SN - 1077-260X

IS - 6

M1 - 6824169

ER -