Selective Growth of AlGaN-Based p-i-n UV Photodiodes Structures

Ming Lun Lee, Yu Hsiang Yeh, Kuo Hua Chang, Po Cheng Chen, Wei Chih Lai, Jinn Kong Sheu

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1 Citation (Scopus)


Al0.25Ga0.75N ultraviolet (UV) p-i-n photodiodes (PDs) with top and inverted p-layer structure are created by selective-area growth on a GaN template layer. All PDs exhibit typical zero bias peak responsivity at 310 nm and the UV-to-visible (310/400 nm) spectral rejection ratio is greater than three orders of magnitude. In contrast to conventional AlGaN-based p-i-n photodiodes, the inverted devices with low-resistivity n-type AlGaN top-contact layers exhibit a nearly flat spectral response at the short wavelength regions (210-310 nm). The proposed device structure can achieve solar-blind, AlGaN/GaN-based p-i-n PDs with high-aluminum content and reduced tensile strain due to the lattice mismatch between AlGaN and GaN layers.

Original languageEnglish
Article number6824169
Pages (from-to)173-177
Number of pages5
JournalIEEE Journal of Selected Topics in Quantum Electronics
Issue number6
Publication statusPublished - 2014 Nov 1

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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