Selective liquid phase oxidation of AlGaAs and application to AlGaAs/InGaAs pseudomorphic high electron mobility transistor

Kuan Wei Lee; Hsien Chang Lin; Fang Ming Lee; Yeong Her Wang

doi:10.1149/1.3185855

Selective liquid phase oxidation of AlGaAs and application to AlGaAs/InGaAs pseudomorphic high electron mobility transistor

Kuan Wei Lee, Hsien Chang Lin, Fang Ming Lee, Yeong Her Wang

Research output: Contribution to journal › Article › peer-review

Abstract

The selective oxidation of AlGaAs using liquid phase oxidation and photoresist or metal as a mask is investigated, and the further application of this process for the fabrication of AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistors (MOS-PHEMTs) is explored. The stability of the oxide film after exposure to the developer solution is also evaluated. The measured f_T and f_max are 13.9 (12) and 59 (30) GHz at maximum transconductance g_m for MOS-PHEMT (PHEMT), respectively. In comparison, the AlGaAs/InGaAs MOS-PHEMT is a good candidate for high speed and low noise applications.

Original language	English
Pages (from-to)	H763-H766
Journal	Journal of the Electrochemical Society
Volume	156
Issue number	10
DOIs	https://doi.org/10.1149/1.3185855
Publication status	Published - 2009 Sept 7

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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title = "Selective liquid phase oxidation of AlGaAs and application to AlGaAs/InGaAs pseudomorphic high electron mobility transistor",

abstract = "The selective oxidation of AlGaAs using liquid phase oxidation and photoresist or metal as a mask is investigated, and the further application of this process for the fabrication of AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistors (MOS-PHEMTs) is explored. The stability of the oxide film after exposure to the developer solution is also evaluated. The measured fT and fmax are 13.9 (12) and 59 (30) GHz at maximum transconductance gm for MOS-PHEMT (PHEMT), respectively. In comparison, the AlGaAs/InGaAs MOS-PHEMT is a good candidate for high speed and low noise applications.",

author = "Lee, {Kuan Wei} and Lin, {Hsien Chang} and Lee, {Fang Ming} and Wang, {Yeong Her}",

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T1 - Selective liquid phase oxidation of AlGaAs and application to AlGaAs/InGaAs pseudomorphic high electron mobility transistor

AU - Lee, Kuan Wei

AU - Lin, Hsien Chang

AU - Lee, Fang Ming

AU - Wang, Yeong Her

PY - 2009/9/7

Y1 - 2009/9/7

N2 - The selective oxidation of AlGaAs using liquid phase oxidation and photoresist or metal as a mask is investigated, and the further application of this process for the fabrication of AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistors (MOS-PHEMTs) is explored. The stability of the oxide film after exposure to the developer solution is also evaluated. The measured fT and fmax are 13.9 (12) and 59 (30) GHz at maximum transconductance gm for MOS-PHEMT (PHEMT), respectively. In comparison, the AlGaAs/InGaAs MOS-PHEMT is a good candidate for high speed and low noise applications.

AB - The selective oxidation of AlGaAs using liquid phase oxidation and photoresist or metal as a mask is investigated, and the further application of this process for the fabrication of AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistors (MOS-PHEMTs) is explored. The stability of the oxide film after exposure to the developer solution is also evaluated. The measured fT and fmax are 13.9 (12) and 59 (30) GHz at maximum transconductance gm for MOS-PHEMT (PHEMT), respectively. In comparison, the AlGaAs/InGaAs MOS-PHEMT is a good candidate for high speed and low noise applications.

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Selective liquid phase oxidation of AlGaAs and application to AlGaAs/InGaAs pseudomorphic high electron mobility transistor

Abstract

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