Selective liquid-phase oxidation of InGaAs and application to metal-oxide-semiconductor InAlAs/InGaAs metamorphic HEMT without gate recess

Kuan Wei Lee, Hsien Chang Lin, Chao Hsien Tu, Kai Lin Lee, Yeong Her Wang

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Low-temperature (30-70°C) selective liquid-phase oxidation of InGaAs using photoresist or metal as the mask is proposed, and the oxide film composition is evaluated. Further, the application of the InAlAsInGaAs metal-oxide-semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) is also demonstrated. Without gate recessing, the gate oxide is obtained directly by oxidizing the InGaAs capping layer in a growth solution. Besides, the proposed process can simplify one mask and grow native oxide films as well as sidewall passivation layers simultaneously. In comparison, the InAlAsInGaAs MOS-MHEMT is a good candidate for high-power applications.

Original languageEnglish
Pages (from-to)H932-H936
JournalJournal of the Electrochemical Society
Volume155
Issue number11
DOIs
Publication statusPublished - 2008 Oct 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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