Low-temperature (30-70°C) selective liquid-phase oxidation of InGaAs using photoresist or metal as the mask is proposed, and the oxide film composition is evaluated. Further, the application of the InAlAsInGaAs metal-oxide-semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) is also demonstrated. Without gate recessing, the gate oxide is obtained directly by oxidizing the InGaAs capping layer in a growth solution. Besides, the proposed process can simplify one mask and grow native oxide films as well as sidewall passivation layers simultaneously. In comparison, the InAlAsInGaAs MOS-MHEMT is a good candidate for high-power applications.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry