Selective liquid-phase oxidation of InGaAs and application to metal-oxide-semiconductor InAlAs/InGaAs metamorphic HEMT without gate recess

Kuan Wei Lee; Hsien Chang Lin; Chao Hsien Tu; Kai Lin Lee; Yeong Her Wang

doi:10.1149/1.2980454

Selective liquid-phase oxidation of InGaAs and application to metal-oxide-semiconductor InAlAs/InGaAs metamorphic HEMT without gate recess

Kuan Wei Lee, Hsien Chang Lin, Chao Hsien Tu, Kai Lin Lee, Yeong Her Wang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Low-temperature (30-70°C) selective liquid-phase oxidation of InGaAs using photoresist or metal as the mask is proposed, and the oxide film composition is evaluated. Further, the application of the InAlAsInGaAs metal-oxide-semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) is also demonstrated. Without gate recessing, the gate oxide is obtained directly by oxidizing the InGaAs capping layer in a growth solution. Besides, the proposed process can simplify one mask and grow native oxide films as well as sidewall passivation layers simultaneously. In comparison, the InAlAsInGaAs MOS-MHEMT is a good candidate for high-power applications.

Original language	English
Pages (from-to)	H932-H936
Journal	Journal of the Electrochemical Society
Volume	155
Issue number	11
DOIs	https://doi.org/10.1149/1.2980454
Publication status	Published - 2008

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.2980454

Cite this

@article{63eb47aa7d934fc2bc58c3f8e4d9cd2a,

title = "Selective liquid-phase oxidation of InGaAs and application to metal-oxide-semiconductor InAlAs/InGaAs metamorphic HEMT without gate recess",

abstract = "Low-temperature (30-70°C) selective liquid-phase oxidation of InGaAs using photoresist or metal as the mask is proposed, and the oxide film composition is evaluated. Further, the application of the InAlAsInGaAs metal-oxide-semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) is also demonstrated. Without gate recessing, the gate oxide is obtained directly by oxidizing the InGaAs capping layer in a growth solution. Besides, the proposed process can simplify one mask and grow native oxide films as well as sidewall passivation layers simultaneously. In comparison, the InAlAsInGaAs MOS-MHEMT is a good candidate for high-power applications.",

author = "Lee, {Kuan Wei} and Lin, {Hsien Chang} and Tu, {Chao Hsien} and Lee, {Kai Lin} and Wang, {Yeong Her}",

year = "2008",

doi = "10.1149/1.2980454",

language = "English",

volume = "155",

pages = "H932--H936",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "11",

}

TY - JOUR

T1 - Selective liquid-phase oxidation of InGaAs and application to metal-oxide-semiconductor InAlAs/InGaAs metamorphic HEMT without gate recess

AU - Lee, Kuan Wei

AU - Lin, Hsien Chang

AU - Tu, Chao Hsien

AU - Lee, Kai Lin

AU - Wang, Yeong Her

PY - 2008

Y1 - 2008

N2 - Low-temperature (30-70°C) selective liquid-phase oxidation of InGaAs using photoresist or metal as the mask is proposed, and the oxide film composition is evaluated. Further, the application of the InAlAsInGaAs metal-oxide-semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) is also demonstrated. Without gate recessing, the gate oxide is obtained directly by oxidizing the InGaAs capping layer in a growth solution. Besides, the proposed process can simplify one mask and grow native oxide films as well as sidewall passivation layers simultaneously. In comparison, the InAlAsInGaAs MOS-MHEMT is a good candidate for high-power applications.

AB - Low-temperature (30-70°C) selective liquid-phase oxidation of InGaAs using photoresist or metal as the mask is proposed, and the oxide film composition is evaluated. Further, the application of the InAlAsInGaAs metal-oxide-semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) is also demonstrated. Without gate recessing, the gate oxide is obtained directly by oxidizing the InGaAs capping layer in a growth solution. Besides, the proposed process can simplify one mask and grow native oxide films as well as sidewall passivation layers simultaneously. In comparison, the InAlAsInGaAs MOS-MHEMT is a good candidate for high-power applications.

UR - http://www.scopus.com/inward/record.url?scp=52649116304&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=52649116304&partnerID=8YFLogxK

U2 - 10.1149/1.2980454

DO - 10.1149/1.2980454

M3 - Article

AN - SCOPUS:52649116304

SN - 0013-4651

VL - 155

SP - H932-H936

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 11

ER -

Selective liquid-phase oxidation of InGaAs and application to metal-oxide-semiconductor InAlAs/InGaAs metamorphic HEMT without gate recess

Abstract

All Science Journal Classification (ASJC) codes

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this