Selectively grown GaAs nanodisks on Si(100) by molecular beam epitaxy

Chia Pu Chu; Shamsul Arafin; Guan Huang; Tianxiao Nie; Kang L. Wang; Yong Wang; Jin Zou; Syed M. Qasim; Mohammed S. Bensaleh

doi:10.1116/1.4865477

Selectively grown GaAs nanodisks on Si(100) by molecular beam epitaxy

Chia Pu Chu, Shamsul Arafin, Guan Huang, Tianxiao Nie, Kang L. Wang, Yong Wang, Jin Zou, Syed M. Qasim, Mohammed S. Bensaleh

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The authors report the molecular beam epitaxial growth and the structural and optical characterizations of self-assembled/catalyst-free GaAs nanodisks on SiO₂ masked Si(100) patterned substrates. Pure zincblende GaAs nanodisks with precise positioning and low defect density are demonstrated by selective area epitaxy. The influence of the growth temperature and deposition duration is investigated. Excellent morphological and structural properties are characterized by scanning electron microscopy and cross-sectional transmission electron microscopy. Defects in the epilayers are reduced by strain relaxation through facets formation and by a lateral overgrowth scheme atop the SiO ₂ mask which is corroborated by microRaman spectroscopy. In particular, the authors show how the material quality contributes to excellent optical properties observed by microphotoluminescence spectroscopy from 77K to room temperature.

Original language	English
Article number	02C111
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	32
Issue number	2
DOIs	https://doi.org/10.1116/1.4865477
Publication status	Published - 2014

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1116/1.4865477

Cite this

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title = "Selectively grown GaAs nanodisks on Si(100) by molecular beam epitaxy",

abstract = "The authors report the molecular beam epitaxial growth and the structural and optical characterizations of self-assembled/catalyst-free GaAs nanodisks on SiO2 masked Si(100) patterned substrates. Pure zincblende GaAs nanodisks with precise positioning and low defect density are demonstrated by selective area epitaxy. The influence of the growth temperature and deposition duration is investigated. Excellent morphological and structural properties are characterized by scanning electron microscopy and cross-sectional transmission electron microscopy. Defects in the epilayers are reduced by strain relaxation through facets formation and by a lateral overgrowth scheme atop the SiO 2 mask which is corroborated by microRaman spectroscopy. In particular, the authors show how the material quality contributes to excellent optical properties observed by microphotoluminescence spectroscopy from 77K to room temperature.",

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T1 - Selectively grown GaAs nanodisks on Si(100) by molecular beam epitaxy

AU - Chu, Chia Pu

AU - Arafin, Shamsul

AU - Huang, Guan

AU - Nie, Tianxiao

AU - Wang, Kang L.

AU - Wang, Yong

AU - Zou, Jin

AU - Qasim, Syed M.

AU - Bensaleh, Mohammed S.

PY - 2014

Y1 - 2014

N2 - The authors report the molecular beam epitaxial growth and the structural and optical characterizations of self-assembled/catalyst-free GaAs nanodisks on SiO2 masked Si(100) patterned substrates. Pure zincblende GaAs nanodisks with precise positioning and low defect density are demonstrated by selective area epitaxy. The influence of the growth temperature and deposition duration is investigated. Excellent morphological and structural properties are characterized by scanning electron microscopy and cross-sectional transmission electron microscopy. Defects in the epilayers are reduced by strain relaxation through facets formation and by a lateral overgrowth scheme atop the SiO 2 mask which is corroborated by microRaman spectroscopy. In particular, the authors show how the material quality contributes to excellent optical properties observed by microphotoluminescence spectroscopy from 77K to room temperature.

AB - The authors report the molecular beam epitaxial growth and the structural and optical characterizations of self-assembled/catalyst-free GaAs nanodisks on SiO2 masked Si(100) patterned substrates. Pure zincblende GaAs nanodisks with precise positioning and low defect density are demonstrated by selective area epitaxy. The influence of the growth temperature and deposition duration is investigated. Excellent morphological and structural properties are characterized by scanning electron microscopy and cross-sectional transmission electron microscopy. Defects in the epilayers are reduced by strain relaxation through facets formation and by a lateral overgrowth scheme atop the SiO 2 mask which is corroborated by microRaman spectroscopy. In particular, the authors show how the material quality contributes to excellent optical properties observed by microphotoluminescence spectroscopy from 77K to room temperature.

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Selectively grown GaAs nanodisks on Si(100) by molecular beam epitaxy

Abstract

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