Selectively grown GaAs nanodisks on Si(100) by molecular beam epitaxy

Chia Pu Chu, Shamsul Arafin, Guan Huang, Tianxiao Nie, Kang L. Wang, Yong Wang, Jin Zou, Syed M. Qasim, Mohammed S. Bensaleh

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


The authors report the molecular beam epitaxial growth and the structural and optical characterizations of self-assembled/catalyst-free GaAs nanodisks on SiO2 masked Si(100) patterned substrates. Pure zincblende GaAs nanodisks with precise positioning and low defect density are demonstrated by selective area epitaxy. The influence of the growth temperature and deposition duration is investigated. Excellent morphological and structural properties are characterized by scanning electron microscopy and cross-sectional transmission electron microscopy. Defects in the epilayers are reduced by strain relaxation through facets formation and by a lateral overgrowth scheme atop the SiO 2 mask which is corroborated by microRaman spectroscopy. In particular, the authors show how the material quality contributes to excellent optical properties observed by microphotoluminescence spectroscopy from 77K to room temperature.

Original languageEnglish
Article number02C111
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Issue number2
Publication statusPublished - 2014

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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