Self-assembled H-aggregation induced high performance poly (3-hexylthiophene) Schottky diode

Vivek Chaudhary, Rajiv K. Pandey, Rajiv Prakash, Arun Kumar Singh

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


The investigation of size confinement and chain orientation within the microstructure of a polymer thin film is very important for electronic device applications and fundamental research. Here, we present single step methodology for the synthesis of solution-processable poly (3-hexylthiophene) (P3HT) nanofibers via a self-assembly process. The formation of P3HT nanofibers is confirmed by atomic force microscopy. The synthesized nanofibers are characterized by UV-visible absorption, photoluminescence, and Raman spectroscopy. The aggregation type of self-assembled P3HT is studied by both UV-visible absorbance and photoluminescence spectroscopy. The exciton bandwidth in polymer films is calculated by following the Spano's H-aggregate model and found to be 28 meV. Raman spectroscopy is used to identify the various stretching modes present in nanofibers. The structural investigation using grazing angle X-ray diffraction of nanofibers reveals the presence of alkyl chain ordering. We have fabricated organic Schottky diodes with P3HT nanofibers on indium tin oxide (ITO) coated glass with configuration Al/P3HT/ITO, and current density-voltage characteristics are subsequently used for extracting the electronic parameters of the device. We have also discussed the charge transport mechanism at the metal/polymer interface.

Original languageEnglish
Article number225501
JournalJournal of Applied Physics
Issue number22
Publication statusPublished - 2017 Dec 14

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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