Self-assembled InAs/Si quantum dot stacks grown by molecular beam epitaxy

P. C. Sharma, Y. S. Tang, K. W. Alt, K. L. Wang

Research output: Contribution to journalConference articlepeer-review


We report on the growth of InAs Quantum dot stacks of various periods on silicon grown by molecular beam epitaxy. Quantum dot layers of InAs, separated by a very thin GaAs spacer layer, are grown directly on hydrogen terminated (100) Si surface. The dependence of dimensional distribution on the growth parameters like temperature and monolayer coverage is studied by atomic force microscopy. The effects of rapid thermal annealing on the stability of stacked structures are investigated by Raman scattering experiments. The morphological changes are characterized in terms of shifts in the longitudinal optic (LO) and transverse optic (TO) phonon modes of InAs and GaAs forming the structure. Post growth annealing has been found to lead to significant alloying of InAs and GaAs in the successive layers leading to the transformation of three-dimensional quantum dot structure to a two dimensional InxGa1-xAs like compositional alloy layer.

Original languageEnglish
Pages (from-to)46-58
Number of pages13
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 2000
Event2nd Conference on Silicon-based Optoelectronics - San Jose, CA, USA
Duration: 2000 Jan 282000 Jan 28

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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