Self-assembled InN dots grown on GaN with an In0.08Ga0.92N intermediate layer by metal organic chemical vapor deposition

Y. K. Fu, C. H. Kuo, C. J. Tun, C. W. Kuo, Wei-Chi Lai, G. C. Chi, C. J. Pan, M. C. Chen, H. F. Hong, S. M. Lan

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Indium nitride (InN) dots grown on sapphires by metal organic chemical vapor deposition (MOCVD) with an In0.08Ga0.92N intermediate layer were demonstrated. Inserting an In0.08Ga0.92N layer between InN and GaN reduced the average size of InN dots, increased the density of InN dots, and prevented the formation of polycrystalline InN or metallic indium. Furthermore, blue shift of the photoluminescence spectrum of InN dots can be identified when inserting an In0.08Ga0.92N intermediate layer, likely because the InN dots with an In0.08Ga0.92N intermediate layer are markedly smaller than InN dots without an In0.08Ga0.92N intermediate layer, indicating the size quantization effect in the dots. Crown

Original languageEnglish
Pages (from-to)4456-4459
Number of pages4
JournalJournal of Crystal Growth
Volume310
Issue number20
DOIs
Publication statusPublished - 2008 Oct 1

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Organic Chemicals
Organic chemicals
Nitrides
Indium
nitrides
metalorganic chemical vapor deposition
indium
Chemical vapor deposition
Metals
indium nitride
Aluminum Oxide
blue shift
Sapphire
Photoluminescence
sapphire
photoluminescence

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Fu, Y. K. ; Kuo, C. H. ; Tun, C. J. ; Kuo, C. W. ; Lai, Wei-Chi ; Chi, G. C. ; Pan, C. J. ; Chen, M. C. ; Hong, H. F. ; Lan, S. M. / Self-assembled InN dots grown on GaN with an In0.08Ga0.92N intermediate layer by metal organic chemical vapor deposition. In: Journal of Crystal Growth. 2008 ; Vol. 310, No. 20. pp. 4456-4459.
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title = "Self-assembled InN dots grown on GaN with an In0.08Ga0.92N intermediate layer by metal organic chemical vapor deposition",
abstract = "Indium nitride (InN) dots grown on sapphires by metal organic chemical vapor deposition (MOCVD) with an In0.08Ga0.92N intermediate layer were demonstrated. Inserting an In0.08Ga0.92N layer between InN and GaN reduced the average size of InN dots, increased the density of InN dots, and prevented the formation of polycrystalline InN or metallic indium. Furthermore, blue shift of the photoluminescence spectrum of InN dots can be identified when inserting an In0.08Ga0.92N intermediate layer, likely because the InN dots with an In0.08Ga0.92N intermediate layer are markedly smaller than InN dots without an In0.08Ga0.92N intermediate layer, indicating the size quantization effect in the dots. Crown",
author = "Fu, {Y. K.} and Kuo, {C. H.} and Tun, {C. J.} and Kuo, {C. W.} and Wei-Chi Lai and Chi, {G. C.} and Pan, {C. J.} and Chen, {M. C.} and Hong, {H. F.} and Lan, {S. M.}",
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Self-assembled InN dots grown on GaN with an In0.08Ga0.92N intermediate layer by metal organic chemical vapor deposition. / Fu, Y. K.; Kuo, C. H.; Tun, C. J.; Kuo, C. W.; Lai, Wei-Chi; Chi, G. C.; Pan, C. J.; Chen, M. C.; Hong, H. F.; Lan, S. M.

In: Journal of Crystal Growth, Vol. 310, No. 20, 01.10.2008, p. 4456-4459.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Self-assembled InN dots grown on GaN with an In0.08Ga0.92N intermediate layer by metal organic chemical vapor deposition

AU - Fu, Y. K.

AU - Kuo, C. H.

AU - Tun, C. J.

AU - Kuo, C. W.

AU - Lai, Wei-Chi

AU - Chi, G. C.

AU - Pan, C. J.

AU - Chen, M. C.

AU - Hong, H. F.

AU - Lan, S. M.

PY - 2008/10/1

Y1 - 2008/10/1

N2 - Indium nitride (InN) dots grown on sapphires by metal organic chemical vapor deposition (MOCVD) with an In0.08Ga0.92N intermediate layer were demonstrated. Inserting an In0.08Ga0.92N layer between InN and GaN reduced the average size of InN dots, increased the density of InN dots, and prevented the formation of polycrystalline InN or metallic indium. Furthermore, blue shift of the photoluminescence spectrum of InN dots can be identified when inserting an In0.08Ga0.92N intermediate layer, likely because the InN dots with an In0.08Ga0.92N intermediate layer are markedly smaller than InN dots without an In0.08Ga0.92N intermediate layer, indicating the size quantization effect in the dots. Crown

AB - Indium nitride (InN) dots grown on sapphires by metal organic chemical vapor deposition (MOCVD) with an In0.08Ga0.92N intermediate layer were demonstrated. Inserting an In0.08Ga0.92N layer between InN and GaN reduced the average size of InN dots, increased the density of InN dots, and prevented the formation of polycrystalline InN or metallic indium. Furthermore, blue shift of the photoluminescence spectrum of InN dots can be identified when inserting an In0.08Ga0.92N intermediate layer, likely because the InN dots with an In0.08Ga0.92N intermediate layer are markedly smaller than InN dots without an In0.08Ga0.92N intermediate layer, indicating the size quantization effect in the dots. Crown

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