Self-confined GaN heterophased quantum wells

Ikai Lo; Yu Chi Hsu; Chia Ho Hsieh; Wen Yuan Pang; Mitch M.C. Chou; Yen Liang Chen; Cheng Hung Shih; Ying Chieh Wang

doi:10.1063/1.3442497

Self-confined GaN heterophased quantum wells

Ikai Lo
, Yu Chi Hsu
, Chia Ho Hsieh
, Wen Yuan Pang
, Mitch M.C. Chou
, Yen Liang Chen
, Cheng Hung Shih
, Ying Chieh Wang

Program on Key Materials

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Wurtzite/zinc-blende/wurtzite GaN heterophased quantum wells (QWs) were grown by plasma-assisted molecular beam epitaxy. A self-assembling mechanism was used to simulate the heterophased QW, in which a wurtzite/zinc-blende phase transition was created by rotating the threefold symmetric N-Ga vertical bond 60°. The GaN heterophased QW was attested by transmission electron microscopy, selective area electron diffraction and cathodoluminescence measurements.

Original language	English
Article number	222105
Journal	Applied Physics Letters
Volume	96
Issue number	22
DOIs	https://doi.org/10.1063/1.3442497
Publication status	Published - 2010 May 31

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3442497

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@article{edec797b46bf4532b13454f078c9e482,

title = "Self-confined GaN heterophased quantum wells",

abstract = "Wurtzite/zinc-blende/wurtzite GaN heterophased quantum wells (QWs) were grown by plasma-assisted molecular beam epitaxy. A self-assembling mechanism was used to simulate the heterophased QW, in which a wurtzite/zinc-blende phase transition was created by rotating the threefold symmetric N-Ga vertical bond 60°. The GaN heterophased QW was attested by transmission electron microscopy, selective area electron diffraction and cathodoluminescence measurements.",

author = "Ikai Lo and Hsu, \{Yu Chi\} and Hsieh, \{Chia Ho\} and Pang, \{Wen Yuan\} and Chou, \{Mitch M.C.\} and Chen, \{Yen Liang\} and Shih, \{Cheng Hung\} and Wang, \{Ying Chieh\}",

year = "2010",

month = may,

day = "31",

doi = "10.1063/1.3442497",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Inc.",

number = "22",

}

TY - JOUR

T1 - Self-confined GaN heterophased quantum wells

AU - Lo, Ikai

AU - Hsu, Yu Chi

AU - Hsieh, Chia Ho

AU - Pang, Wen Yuan

AU - Chou, Mitch M.C.

AU - Chen, Yen Liang

AU - Shih, Cheng Hung

AU - Wang, Ying Chieh

PY - 2010/5/31

Y1 - 2010/5/31

N2 - Wurtzite/zinc-blende/wurtzite GaN heterophased quantum wells (QWs) were grown by plasma-assisted molecular beam epitaxy. A self-assembling mechanism was used to simulate the heterophased QW, in which a wurtzite/zinc-blende phase transition was created by rotating the threefold symmetric N-Ga vertical bond 60°. The GaN heterophased QW was attested by transmission electron microscopy, selective area electron diffraction and cathodoluminescence measurements.

AB - Wurtzite/zinc-blende/wurtzite GaN heterophased quantum wells (QWs) were grown by plasma-assisted molecular beam epitaxy. A self-assembling mechanism was used to simulate the heterophased QW, in which a wurtzite/zinc-blende phase transition was created by rotating the threefold symmetric N-Ga vertical bond 60°. The GaN heterophased QW was attested by transmission electron microscopy, selective area electron diffraction and cathodoluminescence measurements.

UR - https://www.scopus.com/pages/publications/77953548562

UR - https://www.scopus.com/pages/publications/77953548562#tab=citedBy

U2 - 10.1063/1.3442497

DO - 10.1063/1.3442497

M3 - Article

AN - SCOPUS:77953548562

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 222105

ER -

Self-confined GaN heterophased quantum wells

Abstract

All Science Journal Classification (ASJC) codes

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