TY - JOUR
T1 - Self-consistent simulation of modulation-doped field-effect transistors
AU - Wang, Y. H.
AU - Houng, M. P.
AU - Chu, C. H.
AU - Chen, H. H.
N1 - Funding Information:
Acknowledgement--This work is supported in part by the National Science Council under contract No. NSC81-0417-E-006-03 and NSC82-0404-E006-435.
PY - 1994/2
Y1 - 1994/2
N2 - Due to the fact that conventional linear charge-control modulation-doped field-effect transistor (MODFET) models assume full depletion in the doping layer, they are not able to model the nonlinear charge-control relation arising from neutralized donor effect near large gate bias. This neutralized donor effect, also called parasitic MESFET effect, saturates two-dimensional electron gas (2DEG) concentration and raises gate-source capacitance to make high frequency performance poor. In this paper, electron behavior of MODFET along the growth direction is numerically modeled through self-consistent calculation to achieve a more exact charge-control relation. Then, 2DEG channel mobility is described by a semi-empirical analytical form and substituted into a current-density equation together with the charge-control relation fitted by least-square polynomial in order to easily solve for drain-source current and gate transconductance. These theoretically calculated results are in good agreement with those experimental results presented in the literature.
AB - Due to the fact that conventional linear charge-control modulation-doped field-effect transistor (MODFET) models assume full depletion in the doping layer, they are not able to model the nonlinear charge-control relation arising from neutralized donor effect near large gate bias. This neutralized donor effect, also called parasitic MESFET effect, saturates two-dimensional electron gas (2DEG) concentration and raises gate-source capacitance to make high frequency performance poor. In this paper, electron behavior of MODFET along the growth direction is numerically modeled through self-consistent calculation to achieve a more exact charge-control relation. Then, 2DEG channel mobility is described by a semi-empirical analytical form and substituted into a current-density equation together with the charge-control relation fitted by least-square polynomial in order to easily solve for drain-source current and gate transconductance. These theoretically calculated results are in good agreement with those experimental results presented in the literature.
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U2 - 10.1016/0038-1101(94)90075-2
DO - 10.1016/0038-1101(94)90075-2
M3 - Article
AN - SCOPUS:0028381274
SN - 0038-1101
VL - 37
SP - 237
EP - 241
JO - Solid State Electronics
JF - Solid State Electronics
IS - 2
ER -