Self-consistent simulation of modulation-doped field-effect transistors

Y. H. Wang, M. P. Houng, C. H. Chu, H. H. Chen

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Due to the fact that conventional linear charge-control modulation-doped field-effect transistor (MODFET) models assume full depletion in the doping layer, they are not able to model the nonlinear charge-control relation arising from neutralized donor effect near large gate bias. This neutralized donor effect, also called parasitic MESFET effect, saturates two-dimensional electron gas (2DEG) concentration and raises gate-source capacitance to make high frequency performance poor. In this paper, electron behavior of MODFET along the growth direction is numerically modeled through self-consistent calculation to achieve a more exact charge-control relation. Then, 2DEG channel mobility is described by a semi-empirical analytical form and substituted into a current-density equation together with the charge-control relation fitted by least-square polynomial in order to easily solve for drain-source current and gate transconductance. These theoretically calculated results are in good agreement with those experimental results presented in the literature.

Original languageEnglish
Pages (from-to)237-241
Number of pages5
JournalSolid State Electronics
Volume37
Issue number2
DOIs
Publication statusPublished - 1994 Feb

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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