Self-formation of GaN hollow nanocolumns by inductively coupled plasmas etching

S. C. Hung, Y. K. Su, S. J. Chang, S. C. Chen, L. W. Ji, T. H. Fang, Y. H. Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaN hollow nanocolumns were form by ICP etching. It was found that tops of these nanocolumns were hexagonal with the c-axis perpendicular to substrate surface. It was also found that density of the GaN nanocolumns depends strongly on etching parameters which suggests that the formation of these GaN nanocolumns was not related to the dislocation density in the original GaN epitaxial layers. With an Ar concentration of 42.86%, it was found that diameter of the whole nanocolumns was around 80 nm, the diameter of the nanocavities inside these nanocolumns was around 40 nm while the density of the nanocolumns was around 4.4×109 cm-2.

Original languageEnglish
Title of host publication2005 5th IEEE Conference on Nanotechnology
Pages889-893
Number of pages5
Publication statusPublished - 2005 Dec 1
Event2005 5th IEEE Conference on Nanotechnology - Nagoya, Japan
Duration: 2005 Jul 112005 Jul 15

Publication series

Name2005 5th IEEE Conference on Nanotechnology
Volume2

Other

Other2005 5th IEEE Conference on Nanotechnology
CountryJapan
CityNagoya
Period05-07-1105-07-15

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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