Self-Powered ZnO nanowire UV photodetector integrated with GaInP/GaAs/Ge solar cell

Jei Li Hou; Shoou Jin Chang; Chih Hung Wu; Ting Jen Hsueh

doi:10.1109/LED.2013.2269992

Self-Powered ZnO nanowire UV photodetector integrated with GaInP/GaAs/Ge solar cell

Jei Li Hou, Shoou Jin Chang, Chih Hung Wu, Ting Jen Hsueh

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

This letter reports the fabrication of a ZnO nanowire (NW) ultraviolet (UV) metal-semiconductor photodetector (MS-PD) integrated with a GaInP/GaAs/Ge triple-junction (TJ) solar cell. The ZnO NW MS-PD can detect UV light <370nm. The TJ solar cell transforms solar light to electrical power and provides a bias of 2.5 V to enhance the response of the detector. At this bias, the UV-to-visible (370 to 500 nm) rejection ratio of the ZnO NW MS-PD is ∼218 and the measured responsivity is 3.39× 10^-4 AW. In addition, the dynamic response of the ZnO NW MS-PD under the UV light illumination of 370 nm is stable and reproducible with an ON/OFF current ratio of ∼1000.

Original language	English
Article number	6555860
Pages (from-to)	1023-1025
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	8
DOIs	https://doi.org/10.1109/LED.2013.2269992
Publication status	Published - 2013

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2013.2269992

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title = "Self-Powered ZnO nanowire UV photodetector integrated with GaInP/GaAs/Ge solar cell",

abstract = "This letter reports the fabrication of a ZnO nanowire (NW) ultraviolet (UV) metal-semiconductor photodetector (MS-PD) integrated with a GaInP/GaAs/Ge triple-junction (TJ) solar cell. The ZnO NW MS-PD can detect UV light <370nm. The TJ solar cell transforms solar light to electrical power and provides a bias of 2.5 V to enhance the response of the detector. At this bias, the UV-to-visible (370 to 500 nm) rejection ratio of the ZnO NW MS-PD is ∼218 and the measured responsivity is 3.39× 10-4 AW. In addition, the dynamic response of the ZnO NW MS-PD under the UV light illumination of 370 nm is stable and reproducible with an ON/OFF current ratio of ∼1000.",

author = "Hou, {Jei Li} and Chang, {Shoou Jin} and Wu, {Chih Hung} and Hsueh, {Ting Jen}",

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AU - Hou, Jei Li

AU - Chang, Shoou Jin

AU - Wu, Chih Hung

AU - Hsueh, Ting Jen

PY - 2013

Y1 - 2013

N2 - This letter reports the fabrication of a ZnO nanowire (NW) ultraviolet (UV) metal-semiconductor photodetector (MS-PD) integrated with a GaInP/GaAs/Ge triple-junction (TJ) solar cell. The ZnO NW MS-PD can detect UV light <370nm. The TJ solar cell transforms solar light to electrical power and provides a bias of 2.5 V to enhance the response of the detector. At this bias, the UV-to-visible (370 to 500 nm) rejection ratio of the ZnO NW MS-PD is ∼218 and the measured responsivity is 3.39× 10-4 AW. In addition, the dynamic response of the ZnO NW MS-PD under the UV light illumination of 370 nm is stable and reproducible with an ON/OFF current ratio of ∼1000.

AB - This letter reports the fabrication of a ZnO nanowire (NW) ultraviolet (UV) metal-semiconductor photodetector (MS-PD) integrated with a GaInP/GaAs/Ge triple-junction (TJ) solar cell. The ZnO NW MS-PD can detect UV light <370nm. The TJ solar cell transforms solar light to electrical power and provides a bias of 2.5 V to enhance the response of the detector. At this bias, the UV-to-visible (370 to 500 nm) rejection ratio of the ZnO NW MS-PD is ∼218 and the measured responsivity is 3.39× 10-4 AW. In addition, the dynamic response of the ZnO NW MS-PD under the UV light illumination of 370 nm is stable and reproducible with an ON/OFF current ratio of ∼1000.

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Self-Powered ZnO nanowire UV photodetector integrated with GaInP/GaAs/Ge solar cell

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