Self-Powered ZnO nanowire UV photodetector integrated with GaInP/GaAs/Ge solar cell

Jei Li Hou, Shoou-Jinn Chang, Chih Hung Wu, Ting Jen Hsueh

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

This letter reports the fabrication of a ZnO nanowire (NW) ultraviolet (UV) metal-semiconductor photodetector (MS-PD) integrated with a GaInP/GaAs/Ge triple-junction (TJ) solar cell. The ZnO NW MS-PD can detect UV light <370nm. The TJ solar cell transforms solar light to electrical power and provides a bias of 2.5 V to enhance the response of the detector. At this bias, the UV-to-visible (370 to 500 nm) rejection ratio of the ZnO NW MS-PD is ∼218 and the measured responsivity is 3.39× 10-4 AW. In addition, the dynamic response of the ZnO NW MS-PD under the UV light illumination of 370 nm is stable and reproducible with an ON/OFF current ratio of ∼1000.

Original languageEnglish
Article number6555860
Pages (from-to)1023-1025
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number8
DOIs
Publication statusPublished - 2013 Aug 7

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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