Semiconductor diode capable of detecting hydrogen at high temperatures

Huey-Ing Chen (Inventor), Wen-Chau Liu (Inventor)

Research output: Patent

Abstract

A semiconductor diode with hydrogen detection capability includes a semiconductor substrate, a doped semiconductor active layer formed on the substrate and made from a compound having the formula XYZ, in which X is a Group III element, Y is another Group III element different from X, and Z is a Group V element, a semiconductor contact-enhancing layer formed on the active layer and made from a compound having the formula MN, in which M is a Group III element, and N is a Group V element, an ohmic contact layer formed on the semiconductor contact-enhancing layer, and a Schottky barrier contact layer formed on the active layer. The Schottky barrier contact layer is made from a metal that is capable of dissociating a hydrogen molecule into hydrogen atoms.
Original languageEnglish
Patent number6969900
Publication statusPublished - 2004 Sep 23

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semiconductor diodes
hydrogen
electric contacts
hydrogen atoms

Cite this

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title = "Semiconductor diode capable of detecting hydrogen at high temperatures",
abstract = "A semiconductor diode with hydrogen detection capability includes a semiconductor substrate, a doped semiconductor active layer formed on the substrate and made from a compound having the formula XYZ, in which X is a Group III element, Y is another Group III element different from X, and Z is a Group V element, a semiconductor contact-enhancing layer formed on the active layer and made from a compound having the formula MN, in which M is a Group III element, and N is a Group V element, an ohmic contact layer formed on the semiconductor contact-enhancing layer, and a Schottky barrier contact layer formed on the active layer. The Schottky barrier contact layer is made from a metal that is capable of dissociating a hydrogen molecule into hydrogen atoms.",
author = "Huey-Ing Chen and Wen-Chau Liu",
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AU - Chen, Huey-Ing

AU - Liu, Wen-Chau

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N2 - A semiconductor diode with hydrogen detection capability includes a semiconductor substrate, a doped semiconductor active layer formed on the substrate and made from a compound having the formula XYZ, in which X is a Group III element, Y is another Group III element different from X, and Z is a Group V element, a semiconductor contact-enhancing layer formed on the active layer and made from a compound having the formula MN, in which M is a Group III element, and N is a Group V element, an ohmic contact layer formed on the semiconductor contact-enhancing layer, and a Schottky barrier contact layer formed on the active layer. The Schottky barrier contact layer is made from a metal that is capable of dissociating a hydrogen molecule into hydrogen atoms.

AB - A semiconductor diode with hydrogen detection capability includes a semiconductor substrate, a doped semiconductor active layer formed on the substrate and made from a compound having the formula XYZ, in which X is a Group III element, Y is another Group III element different from X, and Z is a Group V element, a semiconductor contact-enhancing layer formed on the active layer and made from a compound having the formula MN, in which M is a Group III element, and N is a Group V element, an ohmic contact layer formed on the semiconductor contact-enhancing layer, and a Schottky barrier contact layer formed on the active layer. The Schottky barrier contact layer is made from a metal that is capable of dissociating a hydrogen molecule into hydrogen atoms.

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