Semiconductor diode capable of detecting hydrogen at high temperatures

Huey-Ing Chen (Inventor), Wen-Chau Liu (Inventor)

Research output: Patent

Abstract

A semiconductor diode with hydrogen detection capability includes a semiconductor substrate, a doped semiconductor active layer formed on the substrate and made from a compound having the formula XYZ, in which X is a Group III element, Y is another Group III element different from X, and Z is a Group V element, a semiconductor contact-enhancing layer formed on the active layer and made from a compound having the formula MN, in which M is a Group III element, and N is a Group V element, an ohmic contact layer formed on the semiconductor contact-enhancing layer, and a Schottky barrier contact layer formed on the active layer. The Schottky barrier contact layer is made from a metal that is capable of dissociating a hydrogen molecule into hydrogen atoms.
Translated title of the contribution氫氣感測器
Original languageEnglish
Patent number6969900
Publication statusPublished - 2004 Sep 23

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