Abstract
We proposed and analyzed a semiconductor multi-barrier tunneling structure, which is incorporated with a quantum dot layer for a cellular automata logic module. Both in-plane and cross-plane directions of tunneling in the self-assembled quantum dot layer were taken into consideration. Nonlinear I-V characteristics as a result of tunneling of a multi-cell system were simulated and used for the modular logic construction. Elemental units, "AND", "OR" and "EXCHANGE" gate operations where shown. In addition, we demonstrated a set of local transition rules for use in one logic module driven by the edge bias. The stability of the scheme with respect to material structure imperfections is discussed.
Original language | English |
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Pages (from-to) | 445-448 |
Number of pages | 4 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 5023 |
DOIs | |
Publication status | Published - 2003 |
Event | 10th International Symposium on Nanostructures: Physics and Technology - St. Petersburg, Russian Federation Duration: 2002 Jun 17 → 2002 Jun 21 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering