Semiconductor tunneling structure with self-assembled quantum dots for multi-logic cellular automata module

A. Khitun, S. Hong, K. L. Wang

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

We proposed and analyzed a semiconductor multi-barrier tunneling structure, which is incorporated with a quantum dot layer for a cellular automata logic module. Both in-plane and cross-plane directions of tunneling in the self-assembled quantum dot layer were taken into consideration. Nonlinear I-V characteristics as a result of tunneling of a multi-cell system were simulated and used for the modular logic construction. Elemental units, "AND", "OR" and "EXCHANGE" gate operations where shown. In addition, we demonstrated a set of local transition rules for use in one logic module driven by the edge bias. The stability of the scheme with respect to material structure imperfections is discussed.

Original languageEnglish
Pages (from-to)445-448
Number of pages4
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5023
DOIs
Publication statusPublished - 2003
Event10th International Symposium on Nanostructures: Physics and Technology - St. Petersburg, Russian Federation
Duration: 2002 Jun 172002 Jun 21

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Semiconductor tunneling structure with self-assembled quantum dots for multi-logic cellular automata module'. Together they form a unique fingerprint.

Cite this