Abstract
We report the results of a multi-scale transport modeling of ultra-narrow GNRs. Atomistic NEGF approach is combined with semiclassical mobility modeling in order to quantify the sensitivity of mobility to edge defects. We find that the mobility in defected GNRs deteriorates more strongly as GNR width is scaled down compared to ideal devices, and that even the minimum mobility variation spans almost one order of magnitude.
Original language | English |
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Pages | 37-40 |
Number of pages | 4 |
DOIs | |
Publication status | Published - 2014 |
Event | 2014 15th International Conference on Ultimate Integration on Silicon, ULIS 2014 - Stockholm, Sweden Duration: 2014 Apr 7 → 2014 Apr 9 |
Conference
Conference | 2014 15th International Conference on Ultimate Integration on Silicon, ULIS 2014 |
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Country/Territory | Sweden |
City | Stockholm |
Period | 14-04-07 → 14-04-09 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering