Sensitivity of carrier mobility to edge defects in ultra-narrow graphene nanoribbons

M. Poljak; K. L. Wang; T. Suligoj

doi:10.1109/ULIS.2014.6813900

Sensitivity of carrier mobility to edge defects in ultra-narrow graphene nanoribbons

M. Poljak, K. L. Wang, T. Suligoj

College of Electrical Engineering and Computer Science

Research output: Contribution to conference › Paper › peer-review

2 Citations (Scopus)

Abstract

We report the results of a multi-scale transport modeling of ultra-narrow GNRs. Atomistic NEGF approach is combined with semiclassical mobility modeling in order to quantify the sensitivity of mobility to edge defects. We find that the mobility in defected GNRs deteriorates more strongly as GNR width is scaled down compared to ideal devices, and that even the minimum mobility variation spans almost one order of magnitude.

Original language	English
Pages	37-40
Number of pages	4
DOIs	https://doi.org/10.1109/ULIS.2014.6813900
Publication status	Published - 2014
Event	2014 15th International Conference on Ultimate Integration on Silicon, ULIS 2014 - Stockholm, Sweden Duration: 2014 Apr 7 → 2014 Apr 9

Conference

Conference	2014 15th International Conference on Ultimate Integration on Silicon, ULIS 2014
Country/Territory	Sweden
City	Stockholm
Period	14-04-07 → 14-04-09

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/ULIS.2014.6813900

Cite this

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title = "Sensitivity of carrier mobility to edge defects in ultra-narrow graphene nanoribbons",

abstract = "We report the results of a multi-scale transport modeling of ultra-narrow GNRs. Atomistic NEGF approach is combined with semiclassical mobility modeling in order to quantify the sensitivity of mobility to edge defects. We find that the mobility in defected GNRs deteriorates more strongly as GNR width is scaled down compared to ideal devices, and that even the minimum mobility variation spans almost one order of magnitude.",

author = "M. Poljak and Wang, {K. L.} and T. Suligoj",

note = "Copyright: Copyright 2014 Elsevier B.V., All rights reserved.; 2014 15th International Conference on Ultimate Integration on Silicon, ULIS 2014 ; Conference date: 07-04-2014 Through 09-04-2014",

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AU - Suligoj, T.

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N2 - We report the results of a multi-scale transport modeling of ultra-narrow GNRs. Atomistic NEGF approach is combined with semiclassical mobility modeling in order to quantify the sensitivity of mobility to edge defects. We find that the mobility in defected GNRs deteriorates more strongly as GNR width is scaled down compared to ideal devices, and that even the minimum mobility variation spans almost one order of magnitude.

AB - We report the results of a multi-scale transport modeling of ultra-narrow GNRs. Atomistic NEGF approach is combined with semiclassical mobility modeling in order to quantify the sensitivity of mobility to edge defects. We find that the mobility in defected GNRs deteriorates more strongly as GNR width is scaled down compared to ideal devices, and that even the minimum mobility variation spans almost one order of magnitude.

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Sensitivity of carrier mobility to edge defects in ultra-narrow graphene nanoribbons

Abstract

Conference

All Science Journal Classification (ASJC) codes

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