Sensitivity of carrier mobility to edge defects in ultra-narrow graphene nanoribbons

M. Poljak, K. L. Wang, T. Suligoj

Research output: Contribution to conferencePaperpeer-review

Abstract

We report the results of a multi-scale transport modeling of ultra-narrow GNRs. Atomistic NEGF approach is combined with semiclassical mobility modeling in order to quantify the sensitivity of mobility to edge defects. We find that the mobility in defected GNRs deteriorates more strongly as GNR width is scaled down compared to ideal devices, and that even the minimum mobility variation spans almost one order of magnitude.

Original languageEnglish
Pages37-40
Number of pages4
DOIs
Publication statusPublished - 2014
Event2014 15th International Conference on Ultimate Integration on Silicon, ULIS 2014 - Stockholm, Sweden
Duration: 2014 Apr 72014 Apr 9

Conference

Conference2014 15th International Conference on Ultimate Integration on Silicon, ULIS 2014
CountrySweden
CityStockholm
Period14-04-0714-04-09

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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