Separated-transport-recombination p-i-n photodiode for high-speed and high-power performance

Jin Wei Shi; H. C. Hsu; F. H. Huang; W. S. Liu; J. I. Chyi; Ja Yu Lu; C. K. Sun; Ci Ling Pan

doi:10.1109/LPT.2005.850886

Separated-transport-recombination p-i-n photodiode for high-speed and high-power performance

Jin Wei Shi, H. C. Hsu, F. H. Huang, W. S. Liu, J. I. Chyi, Ja Yu Lu, C. K. Sun, Ci Ling Pan

Department of Photonics

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

We demonstrate a novel p-i-n photodiode (PD) structure, the separated-transport-recombination PD, which can greatly relieve the tradeoffs among the resistance-capacitance bandwidth limitation, responsivity, and output saturation power performance. Incorporating a short carrier lifetime (less than 1 ps) epitaxial layer to serve as a recombination center, this device exhibits superior speed and power performance to a control PD that has a pure intrinsic photoabsorption layer. Our demonstrated structure can also eliminate the bandwidth degradation problem of the high-speed photodetector, whose active photoabsorption layer is fully composed of short lifetime (∼1 ps) materials, under high dc bias voltages.

Original language	English
Pages (from-to)	1722-1724
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	17
Issue number	8
DOIs	https://doi.org/10.1109/LPT.2005.850886
Publication status	Published - 2005 Aug

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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title = "Separated-transport-recombination p-i-n photodiode for high-speed and high-power performance",

abstract = "We demonstrate a novel p-i-n photodiode (PD) structure, the separated-transport-recombination PD, which can greatly relieve the tradeoffs among the resistance-capacitance bandwidth limitation, responsivity, and output saturation power performance. Incorporating a short carrier lifetime (less than 1 ps) epitaxial layer to serve as a recombination center, this device exhibits superior speed and power performance to a control PD that has a pure intrinsic photoabsorption layer. Our demonstrated structure can also eliminate the bandwidth degradation problem of the high-speed photodetector, whose active photoabsorption layer is fully composed of short lifetime (∼1 ps) materials, under high dc bias voltages.",

author = "Shi, {Jin Wei} and Hsu, {H. C.} and Huang, {F. H.} and Liu, {W. S.} and Chyi, {J. I.} and Lu, {Ja Yu} and Sun, {C. K.} and Pan, {Ci Ling}",

note = "Funding Information: Manuscript received December 12, 2004; revised February 25, 2005. This work was supported by National Science Council of Taiwan under Grant NSC 92-2218-E-008-011-and Grant 93-2215-E-008-022-. J.-W. Shi, H.-C. Hsu, F.-H. Huang, W.-S. Liu, and J.-I. Chyi are with the Department of Electrical Engineering, National Central University, Taoyuan 320, Taiwan, R.O.C. (e-mail: jwshi@ee.ncu.edu.tw). J.-Y. Lu and C.-K. Sun are with the Graduate Institute of Electro-Optical Engineering, National Taiwan University, Taipei 106, Taiwan, R.O.C. C.-L. Pan is with the Institute of Electro-Optical Engineering, National Chaio Tung University, Hsinchu, 300, Taiwan, R.O.C. Digital Object Identifier 10.1109/LPT.2005.850886",

year = "2005",

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doi = "10.1109/LPT.2005.850886",

language = "English",

volume = "17",

pages = "1722--1724",

journal = "IEEE Photonics Technology Letters",

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AU - Shi, Jin Wei

AU - Hsu, H. C.

AU - Huang, F. H.

AU - Liu, W. S.

AU - Chyi, J. I.

AU - Lu, Ja Yu

AU - Sun, C. K.

AU - Pan, Ci Ling

N1 - Funding Information: Manuscript received December 12, 2004; revised February 25, 2005. This work was supported by National Science Council of Taiwan under Grant NSC 92-2218-E-008-011-and Grant 93-2215-E-008-022-. J.-W. Shi, H.-C. Hsu, F.-H. Huang, W.-S. Liu, and J.-I. Chyi are with the Department of Electrical Engineering, National Central University, Taoyuan 320, Taiwan, R.O.C. (e-mail: jwshi@ee.ncu.edu.tw). J.-Y. Lu and C.-K. Sun are with the Graduate Institute of Electro-Optical Engineering, National Taiwan University, Taipei 106, Taiwan, R.O.C. C.-L. Pan is with the Institute of Electro-Optical Engineering, National Chaio Tung University, Hsinchu, 300, Taiwan, R.O.C. Digital Object Identifier 10.1109/LPT.2005.850886

PY - 2005/8

Y1 - 2005/8

N2 - We demonstrate a novel p-i-n photodiode (PD) structure, the separated-transport-recombination PD, which can greatly relieve the tradeoffs among the resistance-capacitance bandwidth limitation, responsivity, and output saturation power performance. Incorporating a short carrier lifetime (less than 1 ps) epitaxial layer to serve as a recombination center, this device exhibits superior speed and power performance to a control PD that has a pure intrinsic photoabsorption layer. Our demonstrated structure can also eliminate the bandwidth degradation problem of the high-speed photodetector, whose active photoabsorption layer is fully composed of short lifetime (∼1 ps) materials, under high dc bias voltages.

AB - We demonstrate a novel p-i-n photodiode (PD) structure, the separated-transport-recombination PD, which can greatly relieve the tradeoffs among the resistance-capacitance bandwidth limitation, responsivity, and output saturation power performance. Incorporating a short carrier lifetime (less than 1 ps) epitaxial layer to serve as a recombination center, this device exhibits superior speed and power performance to a control PD that has a pure intrinsic photoabsorption layer. Our demonstrated structure can also eliminate the bandwidth degradation problem of the high-speed photodetector, whose active photoabsorption layer is fully composed of short lifetime (∼1 ps) materials, under high dc bias voltages.

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Separated-transport-recombination p-i-n photodiode for high-speed and high-power performance

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