Separated-transport-recombination p-i-n photodiode for high-speed and high-power performance

Jin Wei Shi, H. C. Hsu, F. H. Huang, W. S. Liu, J. I. Chyi, Ja Yu Lu, C. K. Sun, Ci Ling Pan

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

We demonstrate a novel p-i-n photodiode (PD) structure, the separated-transport-recombination PD, which can greatly relieve the tradeoffs among the resistance-capacitance bandwidth limitation, responsivity, and output saturation power performance. Incorporating a short carrier lifetime (less than 1 ps) epitaxial layer to serve as a recombination center, this device exhibits superior speed and power performance to a control PD that has a pure intrinsic photoabsorption layer. Our demonstrated structure can also eliminate the bandwidth degradation problem of the high-speed photodetector, whose active photoabsorption layer is fully composed of short lifetime (∼1 ps) materials, under high dc bias voltages.

Original languageEnglish
Pages (from-to)1722-1724
Number of pages3
JournalIEEE Photonics Technology Letters
Volume17
Issue number8
DOIs
Publication statusPublished - 2005 Aug

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Separated-transport-recombination p-i-n photodiode for high-speed and high-power performance'. Together they form a unique fingerprint.

Cite this