Shallow acceptor states in SiGe quantum wells

M. S. Kagan, I. V. Altukhov, K. A. Korolev, D. V. Orlov, V. P. Sinis, S. G. Thomas, K. L. Wang, K. Schmalz, I. N. Yassievich

Research output: Contribution to journalArticlepeer-review

Abstract

The temperature dependence of conductivity and hole mobility in boron doped SiGe quantum well structures was studied. The conductivity at low temperatures is shown to be due to hopping over neutral B centers while at higher temperatures, it is due to two-stage exitation including thermal activation of holes from the ground to strain-split B states following by hole tunneling into the valence band.

Original languageEnglish
Pages (from-to)233-236
Number of pages4
JournalMaterials Science Forum
Volume297-298
Publication statusPublished - 1999

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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