Shallow acceptor states in SiGe quantum wells

M. S. Kagan; I. V. Altukhov; K. A. Korolev; D. V. Orlov; V. P. Sinis; S. G. Thomas; K. L. Wang; K. Schmalz; I. N. Yassievich

Shallow acceptor states in SiGe quantum wells

M. S. Kagan, I. V. Altukhov, K. A. Korolev, D. V. Orlov, V. P. Sinis, S. G. Thomas, K. L. Wang, K. Schmalz, I. N. Yassievich

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

Abstract

The temperature dependence of conductivity and hole mobility in boron doped SiGe quantum well structures was studied. The conductivity at low temperatures is shown to be due to hopping over neutral B centers while at higher temperatures, it is due to two-stage exitation including thermal activation of holes from the ground to strain-split B states following by hole tunneling into the valence band.

Original language	English
Pages (from-to)	233-236
Number of pages	4
Journal	Materials Science Forum
Volume	297-298
Publication status	Published - 1999

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Shallow acceptor states in SiGe quantum wells",

abstract = "The temperature dependence of conductivity and hole mobility in boron doped SiGe quantum well structures was studied. The conductivity at low temperatures is shown to be due to hopping over neutral B centers while at higher temperatures, it is due to two-stage exitation including thermal activation of holes from the ground to strain-split B states following by hole tunneling into the valence band.",

author = "Kagan, {M. S.} and Altukhov, {I. V.} and Korolev, {K. A.} and Orlov, {D. V.} and Sinis, {V. P.} and Thomas, {S. G.} and Wang, {K. L.} and K. Schmalz and Yassievich, {I. N.}",

year = "1999",

language = "English",

volume = "297-298",

pages = "233--236",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications",

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TY - JOUR

T1 - Shallow acceptor states in SiGe quantum wells

AU - Kagan, M. S.

AU - Altukhov, I. V.

AU - Korolev, K. A.

AU - Orlov, D. V.

AU - Sinis, V. P.

AU - Thomas, S. G.

AU - Wang, K. L.

AU - Schmalz, K.

AU - Yassievich, I. N.

PY - 1999

Y1 - 1999

N2 - The temperature dependence of conductivity and hole mobility in boron doped SiGe quantum well structures was studied. The conductivity at low temperatures is shown to be due to hopping over neutral B centers while at higher temperatures, it is due to two-stage exitation including thermal activation of holes from the ground to strain-split B states following by hole tunneling into the valence band.

AB - The temperature dependence of conductivity and hole mobility in boron doped SiGe quantum well structures was studied. The conductivity at low temperatures is shown to be due to hopping over neutral B centers while at higher temperatures, it is due to two-stage exitation including thermal activation of holes from the ground to strain-split B states following by hole tunneling into the valence band.

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M3 - Article

AN - SCOPUS:33751036838

SN - 0255-5476

VL - 297-298

SP - 233

EP - 236

JO - Materials Science Forum

JF - Materials Science Forum

ER -

Shallow acceptor states in SiGe quantum wells

Abstract

All Science Journal Classification (ASJC) codes

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