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Shallow acceptor states in SiGe quantum wells
M. S. Kagan
, I. V. Altukhov
, K. A. Korolev
, D. V. Orlov
, V. P. Sinis
, S. G. Thomas
, K. L. Wang
, K. Schmalz
, I. N. Yassievich
College of Electrical Engineering and Computer Science
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Keyphrases
Acceptor States
100%
SiGe Quantum Well
100%
Shallow Acceptor
100%
Low Temperature
50%
High Temperature
50%
Hole Mobility
50%
Boron Doping
50%
Quantum Well Structure
50%
Thermal Activation
50%
Valence Band
50%
Temperature-dependent Thermal Conductivity
50%
Hole Tunneling
50%
Doped SiGe
50%
Engineering
Quantum Well
100%
Low-Temperature
50%
Temperature Dependence
50%
Tunnel Construction
50%
Valence Band
50%
Chemistry
Valence Band
100%
Hole Mobility
100%
Shallow Acceptor
100%
Physics
Quantum Wells
100%
Temperature Dependence
50%