Shallow trench isolation stress modification by optimal shallow trench isolation process for sub-65-nm low power complementary metal oxide semiconductor technology

Chemical Compounds

• Boron Atom 48%
• Diffusion 52%
• Doping Material 74%
• Electric Field 25%
• Field Effect 27%
• Leakage Current 36%
• Length 16%
• Mechanical Stress 71%
• Metal Oxide 70%
• Modification 47%
• Parasitic 34%
• Reduction 12%
• Semiconductor 64%

Engineering & Materials Science

• Boron 47%
• Compressive stress 21%
• Data storage equipment 51%
• Degradation 14%
• Doping (additives) 94%
• Electric fields 19%
• Leakage currents 22%
• Metals 54%
• MOSFET devices 24%
• Oxide semiconductors 100%
• Transistors 17%

Physics & Astronomy

• boron 10%
• cells 3%
• CMOS 75%
• degradation 4%
• electric fields 3%
• field effect transistors 4%
• isolation 80%
• leakage 14%
• metal oxide semiconductors 6%
• random access memory 27%
• transistors 4%