Shape reversal of Ge/Si domes to pyramids via Si-Ge intermixing and strain reduction

William L. Henstrom, L. I.U. Chuan-Pu, J. Murray Gibson

Research output: Contribution to journalConference articlepeer-review

Abstract

At 650°C, Si freely intermixes with Ge in the dome islands causing a reduction in the strain of the islands and an increase in island size. The shape reversal of Ge/Si domes to pyramids is investigated by analysis of the strain and size changes that occur on an island by island basis. This was carried out for anneal times of 0, 20, 40 and 60 minutes. Transition islands were observed consistent with previous work [1], which are partially domes and partially pyramids. These islands demonstrated a strain gradient, having a slightly lower strain on the side that has transformed to a pyramid. Cross-sectional STEM was then used to show that this strain gradient is associated with a non-uniform Si intermixing in the islands.

Original languageEnglish
Pages (from-to)45-50
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume583
Publication statusPublished - 2000
EventSelf-Organized Processes in Semiconductor Alloys - Boston, MA, USA
Duration: 1999 Nov 291999 Dec 2

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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