Shape reversal of Ge/Si domes to pyramids via Si-Ge intermixing and strain reduction

William L. Henstrom; L. I.U. Chuan-Pu; J. Murray Gibson

Shape reversal of Ge/Si domes to pyramids via Si-Ge intermixing and strain reduction

William L. Henstrom, L. I.U. Chuan-Pu, J. Murray Gibson

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

At 650°C, Si freely intermixes with Ge in the dome islands causing a reduction in the strain of the islands and an increase in island size. The shape reversal of Ge/Si domes to pyramids is investigated by analysis of the strain and size changes that occur on an island by island basis. This was carried out for anneal times of 0, 20, 40 and 60 minutes. Transition islands were observed consistent with previous work [1], which are partially domes and partially pyramids. These islands demonstrated a strain gradient, having a slightly lower strain on the side that has transformed to a pyramid. Cross-sectional STEM was then used to show that this strain gradient is associated with a non-uniform Si intermixing in the islands.

Original language	English
Pages (from-to)	45-50
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	583
Publication status	Published - 2000
Event	Self-Organized Processes in Semiconductor Alloys - Boston, MA, USA Duration: 1999 Nov 29 → 1999 Dec 2

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{2817463ee68a4549a7964d53d28098f3,

title = "Shape reversal of Ge/Si domes to pyramids via Si-Ge intermixing and strain reduction",

abstract = "At 650°C, Si freely intermixes with Ge in the dome islands causing a reduction in the strain of the islands and an increase in island size. The shape reversal of Ge/Si domes to pyramids is investigated by analysis of the strain and size changes that occur on an island by island basis. This was carried out for anneal times of 0, 20, 40 and 60 minutes. Transition islands were observed consistent with previous work [1], which are partially domes and partially pyramids. These islands demonstrated a strain gradient, having a slightly lower strain on the side that has transformed to a pyramid. Cross-sectional STEM was then used to show that this strain gradient is associated with a non-uniform Si intermixing in the islands.",

author = "Henstrom, {William L.} and Chuan-Pu, {L. I.U.} and {Murray Gibson}, J.",

year = "2000",

language = "English",

volume = "583",

pages = "45--50",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Self-Organized Processes in Semiconductor Alloys ; Conference date: 29-11-1999 Through 02-12-1999",

}

TY - JOUR

T1 - Shape reversal of Ge/Si domes to pyramids via Si-Ge intermixing and strain reduction

AU - Henstrom, William L.

AU - Chuan-Pu, L. I.U.

AU - Murray Gibson, J.

PY - 2000

Y1 - 2000

N2 - At 650°C, Si freely intermixes with Ge in the dome islands causing a reduction in the strain of the islands and an increase in island size. The shape reversal of Ge/Si domes to pyramids is investigated by analysis of the strain and size changes that occur on an island by island basis. This was carried out for anneal times of 0, 20, 40 and 60 minutes. Transition islands were observed consistent with previous work [1], which are partially domes and partially pyramids. These islands demonstrated a strain gradient, having a slightly lower strain on the side that has transformed to a pyramid. Cross-sectional STEM was then used to show that this strain gradient is associated with a non-uniform Si intermixing in the islands.

AB - At 650°C, Si freely intermixes with Ge in the dome islands causing a reduction in the strain of the islands and an increase in island size. The shape reversal of Ge/Si domes to pyramids is investigated by analysis of the strain and size changes that occur on an island by island basis. This was carried out for anneal times of 0, 20, 40 and 60 minutes. Transition islands were observed consistent with previous work [1], which are partially domes and partially pyramids. These islands demonstrated a strain gradient, having a slightly lower strain on the side that has transformed to a pyramid. Cross-sectional STEM was then used to show that this strain gradient is associated with a non-uniform Si intermixing in the islands.

UR - http://www.scopus.com/inward/record.url?scp=0033680178&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033680178&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033680178

SN - 0272-9172

VL - 583

SP - 45

EP - 50

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Self-Organized Processes in Semiconductor Alloys

Y2 - 29 November 1999 through 2 December 1999

ER -

Shape reversal of Ge/Si domes to pyramids via Si-Ge intermixing and strain reduction

Abstract

All Science Journal Classification (ASJC) codes

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