Si-based tunnel field-effect transistors for low-power nano-electronics

A. S. Verhulst; W. G. Vandenberghe; D. Leonelli; R. Rooyackers; A. Vandooren; J. Zhuge; Kuo-Hsing Kao; B. Sorée; W. Magnus; M. V. Fischetti; G. Pourtois; C. Huyghebaert; R. Huang; Y. Wang; K. De Meyer; W. Dehaene; M. M. Heyns; G. Groeseneken

doi:10.1109/DRC.2011.5994494

Si-based tunnel field-effect transistors for low-power nano-electronics

A. S. Verhulst, W. G. Vandenberghe, D. Leonelli, R. Rooyackers, A. Vandooren, J. Zhuge, Kuo-Hsing Kao, B. Sorée, W. Magnus, M. V. Fischetti, G. Pourtois, C. Huyghebaert, R. Huang, Y. Wang, K. De Meyer, W. Dehaene, M. M. Heyns, G. Groeseneken

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

Unlike MOSFETs, tunnel-FETs (TFETs) are not limited by a 60 mV/dec subthreshold swing and therefore scaling the supply voltage beyond the MOSFET's 1 V plateau becomes feasible. Supply voltage scaling is a necessary condition for reducing the power consumption per transistor, which enables further size scaling of the FETs. Designing a successful FET is however challenging, because it is not sufficient for the TFET to realize a sub-60 mV/dec subthreshold swing at one particular voltage. The next-generation FET must realize an average sub-60 mV/dec subthreshold swing over the whole supply voltage window, such that on-currents of about I_on = 100 μA/μm are achieved with I _on/I_off ratios of about 10⁶ for sub 0.5 V supply voltages. Silicon-based TFETs are the most attractive because they allow for a full re-use of the existing expertise in fabricating silicon MOSFETs. However, the large bandgap of silicon (Si) results in low on-currents for the all-Si TFET and both input and output characteristics are inferior to the ones of all-Si MOSFETs.

Original language	English
Title of host publication	69th Device Research Conference, DRC 2011 - Conference Digest
Pages	193-196
Number of pages	4
DOIs	https://doi.org/10.1109/DRC.2011.5994494
Publication status	Published - 2011 Dec 1
Event	69th Device Research Conference, DRC 2011 - Santa Barbara, CA, United States Duration: 2011 Jun 20 → 2011 Jun 22

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	69th Device Research Conference, DRC 2011
Country/Territory	United States
City	Santa Barbara, CA
Period	11-06-20 → 11-06-22

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2011.5994494

Cite this

Verhulst, A. S., Vandenberghe, W. G., Leonelli, D., Rooyackers, R., Vandooren, A., Zhuge, J., Kao, K-H., Sorée, B., Magnus, W., Fischetti, M. V., Pourtois, G., Huyghebaert, C., Huang, R., Wang, Y., De Meyer, K., Dehaene, W., Heyns, M. M., & Groeseneken, G. (2011). Si-based tunnel field-effect transistors for low-power nano-electronics. In 69th Device Research Conference, DRC 2011 - Conference Digest (pp. 193-196). [5994494] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2011.5994494

Verhulst, A. S. ; Vandenberghe, W. G. ; Leonelli, D. ; Rooyackers, R. ; Vandooren, A. ; Zhuge, J. ; Kao, Kuo-Hsing ; Sorée, B. ; Magnus, W. ; Fischetti, M. V. ; Pourtois, G. ; Huyghebaert, C. ; Huang, R. ; Wang, Y. ; De Meyer, K. ; Dehaene, W. ; Heyns, M. M. ; Groeseneken, G. / Si-based tunnel field-effect transistors for low-power nano-electronics. 69th Device Research Conference, DRC 2011 - Conference Digest. 2011. pp. 193-196 (Device Research Conference - Conference Digest, DRC).

@inproceedings{f2943899dfe24739adb34802f061592b,

title = "Si-based tunnel field-effect transistors for low-power nano-electronics",

abstract = "Unlike MOSFETs, tunnel-FETs (TFETs) are not limited by a 60 mV/dec subthreshold swing and therefore scaling the supply voltage beyond the MOSFET's 1 V plateau becomes feasible. Supply voltage scaling is a necessary condition for reducing the power consumption per transistor, which enables further size scaling of the FETs. Designing a successful FET is however challenging, because it is not sufficient for the TFET to realize a sub-60 mV/dec subthreshold swing at one particular voltage. The next-generation FET must realize an average sub-60 mV/dec subthreshold swing over the whole supply voltage window, such that on-currents of about Ion = 100 μA/μm are achieved with I on/Ioff ratios of about 106 for sub 0.5 V supply voltages. Silicon-based TFETs are the most attractive because they allow for a full re-use of the existing expertise in fabricating silicon MOSFETs. However, the large bandgap of silicon (Si) results in low on-currents for the all-Si TFET and both input and output characteristics are inferior to the ones of all-Si MOSFETs.",

author = "Verhulst, {A. S.} and Vandenberghe, {W. G.} and D. Leonelli and R. Rooyackers and A. Vandooren and J. Zhuge and Kuo-Hsing Kao and B. Sor{\'e}e and W. Magnus and Fischetti, {M. V.} and G. Pourtois and C. Huyghebaert and R. Huang and Y. Wang and {De Meyer}, K. and W. Dehaene and Heyns, {M. M.} and G. Groeseneken",

year = "2011",

month = dec,

day = "1",

doi = "10.1109/DRC.2011.5994494",

language = "English",

isbn = "9781612842417",

series = "Device Research Conference - Conference Digest, DRC",

pages = "193--196",

booktitle = "69th Device Research Conference, DRC 2011 - Conference Digest",

note = "69th Device Research Conference, DRC 2011 ; Conference date: 20-06-2011 Through 22-06-2011",

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Verhulst, AS, Vandenberghe, WG, Leonelli, D, Rooyackers, R, Vandooren, A, Zhuge, J, Kao, K-H, Sorée, B, Magnus, W, Fischetti, MV, Pourtois, G, Huyghebaert, C, Huang, R, Wang, Y, De Meyer, K, Dehaene, W, Heyns, MM & Groeseneken, G 2011, Si-based tunnel field-effect transistors for low-power nano-electronics. in 69th Device Research Conference, DRC 2011 - Conference Digest., 5994494, Device Research Conference - Conference Digest, DRC, pp. 193-196, 69th Device Research Conference, DRC 2011, Santa Barbara, CA, United States, 11-06-20. https://doi.org/10.1109/DRC.2011.5994494

Si-based tunnel field-effect transistors for low-power nano-electronics. / Verhulst, A. S.; Vandenberghe, W. G.; Leonelli, D.; Rooyackers, R.; Vandooren, A.; Zhuge, J.; Kao, Kuo-Hsing; Sorée, B.; Magnus, W.; Fischetti, M. V.; Pourtois, G.; Huyghebaert, C.; Huang, R.; Wang, Y.; De Meyer, K.; Dehaene, W.; Heyns, M. M.; Groeseneken, G.

69th Device Research Conference, DRC 2011 - Conference Digest. 2011. p. 193-196 5994494 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Si-based tunnel field-effect transistors for low-power nano-electronics

AU - Verhulst, A. S.

AU - Vandenberghe, W. G.

AU - Leonelli, D.

AU - Rooyackers, R.

AU - Vandooren, A.

AU - Zhuge, J.

AU - Kao, Kuo-Hsing

AU - Sorée, B.

AU - Magnus, W.

AU - Fischetti, M. V.

AU - Pourtois, G.

AU - Huyghebaert, C.

AU - Huang, R.

AU - Wang, Y.

AU - De Meyer, K.

AU - Dehaene, W.

AU - Heyns, M. M.

AU - Groeseneken, G.

PY - 2011/12/1

Y1 - 2011/12/1

N2 - Unlike MOSFETs, tunnel-FETs (TFETs) are not limited by a 60 mV/dec subthreshold swing and therefore scaling the supply voltage beyond the MOSFET's 1 V plateau becomes feasible. Supply voltage scaling is a necessary condition for reducing the power consumption per transistor, which enables further size scaling of the FETs. Designing a successful FET is however challenging, because it is not sufficient for the TFET to realize a sub-60 mV/dec subthreshold swing at one particular voltage. The next-generation FET must realize an average sub-60 mV/dec subthreshold swing over the whole supply voltage window, such that on-currents of about Ion = 100 μA/μm are achieved with I on/Ioff ratios of about 106 for sub 0.5 V supply voltages. Silicon-based TFETs are the most attractive because they allow for a full re-use of the existing expertise in fabricating silicon MOSFETs. However, the large bandgap of silicon (Si) results in low on-currents for the all-Si TFET and both input and output characteristics are inferior to the ones of all-Si MOSFETs.

AB - Unlike MOSFETs, tunnel-FETs (TFETs) are not limited by a 60 mV/dec subthreshold swing and therefore scaling the supply voltage beyond the MOSFET's 1 V plateau becomes feasible. Supply voltage scaling is a necessary condition for reducing the power consumption per transistor, which enables further size scaling of the FETs. Designing a successful FET is however challenging, because it is not sufficient for the TFET to realize a sub-60 mV/dec subthreshold swing at one particular voltage. The next-generation FET must realize an average sub-60 mV/dec subthreshold swing over the whole supply voltage window, such that on-currents of about Ion = 100 μA/μm are achieved with I on/Ioff ratios of about 106 for sub 0.5 V supply voltages. Silicon-based TFETs are the most attractive because they allow for a full re-use of the existing expertise in fabricating silicon MOSFETs. However, the large bandgap of silicon (Si) results in low on-currents for the all-Si TFET and both input and output characteristics are inferior to the ones of all-Si MOSFETs.

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BT - 69th Device Research Conference, DRC 2011 - Conference Digest

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ER -

Si-based tunnel field-effect transistors for low-power nano-electronics

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